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24LC16BT-E/SNG PDF预览

24LC16BT-E/SNG

更新时间: 2024-10-28 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 78K
描述
2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8

24LC16BT-E/SNG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.07
其他特性:1 MILLION ERASE/WRITE CYCLES最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010MMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.91 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

24LC16BT-E/SNG 数据手册

 浏览型号24LC16BT-E/SNG的Datasheet PDF文件第2页浏览型号24LC16BT-E/SNG的Datasheet PDF文件第3页浏览型号24LC16BT-E/SNG的Datasheet PDF文件第4页浏览型号24LC16BT-E/SNG的Datasheet PDF文件第5页浏览型号24LC16BT-E/SNG的Datasheet PDF文件第6页浏览型号24LC16BT-E/SNG的Datasheet PDF文件第7页 
24LC16B  
2
16K 2.5V I C Serial EEPROM  
FEATURES  
PACKAGE TYPES  
• Single supply with operation down to 2.5V  
• Low power CMOS technology  
PDIP  
A0  
A1  
1
2
8
7
VCC  
WP  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
- 5 µA standby current typical at 3.0V  
• Organized as 8 blocks of 256 bytes (8 x 256 x 8)  
• 2-wire serial interface bus, I2C compatible  
• Schmitt trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (2.5V) and 400 kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
A2  
3
4
6
5
SCL  
SDA  
VSS  
SOIC  
1
8
A0  
A1  
VCC  
2
3
4
7
6
5
WP  
A2  
SCL  
SDA  
VSS  
• Factory programming (QTP) available  
• ESD protection > 4,000V  
14-lead  
SOIC  
• 10,000,000 erase/write cycles guaranteed  
• Data retention > 200 years  
14  
1
2
3
4
5
6
7
NC  
NC  
A0  
13  
12  
11  
• 8-pin DIP, 8-lead or 14-lead SOIC packages  
• Available for extended temperature ranges  
VCC  
WP  
NC  
A1  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40°C to +85°C  
NC  
10  
9
SCL  
SDA  
NC  
A2  
VSS  
NC  
DESCRIPTION  
The Microchip Technology Inc. 24LC16B is a 16K bit  
Electrically Erasable PROM. The device is organized  
as eight blocks of 256 x 8 bit memory with a 2-wire  
serial interface. Low voltage design permits operation  
down to 2.5 volts with standby and active currents of  
only 5 µA and 1 mA respectively. The 24LC16B also  
has a page-write capability for up to 16 bytes of data.  
The 24LC16B is available in the standard 8-pin DIP and  
both 8-lead and 14-lead surface mount SOIC pack-  
ages.  
8
BLOCK DIAGRAM  
WP  
HV GENERATOR  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1996 Microchip Technology Inc.  
DS20070G-page 1  
This document was created with FrameMaker 4 0 4  

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