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24LC16BT-E/SN16KVAO PDF预览

24LC16BT-E/SN16KVAO

更新时间: 2024-10-28 14:39:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
46页 872K
描述
EEPROM, 256X8, Serial, CMOS, PDSO8

24LC16BT-E/SN16KVAO 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.63
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:8端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL筛选级别:AEC-Q100; TS 16949
座面最大高度:1.75 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

24LC16BT-E/SN16KVAO 数据手册

 浏览型号24LC16BT-E/SN16KVAO的Datasheet PDF文件第2页浏览型号24LC16BT-E/SN16KVAO的Datasheet PDF文件第3页浏览型号24LC16BT-E/SN16KVAO的Datasheet PDF文件第4页浏览型号24LC16BT-E/SN16KVAO的Datasheet PDF文件第5页浏览型号24LC16BT-E/SN16KVAO的Datasheet PDF文件第6页浏览型号24LC16BT-E/SN16KVAO的Datasheet PDF文件第7页 
24AA16/24LC16B/24FC16  
16K I2C Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range Max. Clock Frequency Temp. Ranges  
Available Packages  
24AA16  
24LC16B  
24FC16  
1.7V-5.5V  
2.5V-5.5V  
1.7V-5.5V  
400 kHz(1)  
400 kHz  
1 MHz  
I, E  
I, E  
I, E  
MC, MS, P, SN, MNY, ST, OT, CSP  
MC, MS, P, SN, MNY, ST, OT  
MS, P, SN, ST, MUY, OT  
Note 1: 100 kHz for VCC < 2.5V.  
Features  
Packages  
• Single Supply with Operation down to 1.7V for  
24AA16 and 24FC16 Devices, 2.5V for 24LC16B  
Devices  
• 8-Lead DFN, 8-Lead MSOP, 8-Lead PDIP, 8-Lead  
SOIC, 8-Lead TDFN, 8-Lead TSSOP, 8-Lead  
UDFN, 5-Lead SOT-23 and 5-Ball CSP  
• Low-Power CMOS Technology:  
- Read current 1 mA, maximum  
- Standby current 1 μA, maximum (I-temp.)  
• Two-Wire Serial Interface, I2C Compatible  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz, 400 kHz and 1 MHz Compatibility  
• Page Write Time: 5 ms, Maximum  
• Self-Timed Erase/Write Cycle  
• 16-Byte Page Write Buffer  
Description  
The Microchip Technology Inc. 24XX16(1) is a 16-Kbit  
Electrically Erasable PROM. The device is organized  
as eight blocks of 256 x 8-bit memory with a two-wire  
serial interface. Its low-voltage design permits  
operation down to 1.7V with standby and active  
currents of only 1 μA and 1 mA, respectively. The  
24XX16 also has a page write capability for up to  
16 bytes of data.  
Note 1: 24XX16 is used in this document as a  
• Hardware Write-Protect  
generic  
part  
number  
for  
the  
• ESD Protection >4,000V  
24AA16/24LC16B/24FC16 devices.  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
• Factory Programming Available  
• RoHS Compliant  
Temperature Ranges:  
- Industrial (I): -40°C to +85°C  
- Extended (E): -40°C to +125°C  
• Automotive AEC-Q100 Qualified  
Package Types  
5-Ball CSP  
(Top View)  
8-Lead PDIP/MSOP  
8-Lead DFN/TDFN/UDFN  
8-Lead SOIC/TSSOP  
5-Lead SOT-23  
(Top View)  
(Top View)  
(Top View)  
(Top View)  
A0(1)  
A1(1)  
A2(1)  
A0(1)  
1
8
VCC  
A0(1)  
A1(1)  
A2(1)  
1
2
3
4
8
7
6
5
1
8
VCC  
VCC  
WP  
SCL  
VSS  
1
5
WP  
VCC  
WP  
1
4
2
5
VSS  
A1(1)  
A2(1)  
VSS  
2
3
4
7
6
WP  
2
3
4
7
6
5
WP  
3
2
SCL  
SCL  
SDA  
SCL  
SDA  
SDA  
SCL  
4
3
SDA  
VCC  
VSS  
5SDA  
VSS  
Note 1: Pins A0, A1 and A2 are not used by the 24XX16 (no internal connections).  
2002-2019 Microchip Technology Inc.  
DS20001703M-page 1  

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