是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DFN | 包装说明: | 2 X 3 MM, 0.75 MM HEIGHT, PLASTIC, TDFN-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.13 | 最大时钟频率 (fCLK): | 0.4 MHz |
数据保留时间-最小值: | 200 | 耐久性: | 1000000 Write/Erase Cycles |
I2C控制字节: | 1010MMMR | JESD-30 代码: | R-PDSO-N8 |
长度: | 3 mm | 内存密度: | 2048 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 256 words | 字数代码: | 256 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256X8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC8,.11,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | SERIAL |
电源: | 3/5 V | 认证状态: | Not Qualified |
座面最大高度: | 0.8 mm | 串行总线类型: | I2C |
最大待机电流: | 0.000001 A | 子类别: | EEPROMs |
最大压摆率: | 0.003 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | DUAL |
宽度: | 2 mm | 最长写入周期时间 (tWC): | 5 ms |
写保护: | HARDWARE | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
24LC16BHT-I/MNY | MICROCHIP |
完全替代 |
16K I2C™ Serial EEPROM with Half-Array Write- |
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24LC16BH-I/MS | MICROCHIP |
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