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24LC08BT-I/SNRVE PDF预览

24LC08BT-I/SNRVE

更新时间: 2024-01-16 07:09:32
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 451K
描述
8K 2-Wire SERIAL EEPROM, -40C to +85C, 8-SOIC 150mil, T/R

24LC08BT-I/SNRVE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:4.40 MM, ROHS COMPLIANT, PLASTIC, MO-153, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.17
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010XMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

24LC08BT-I/SNRVE 数据手册

 浏览型号24LC08BT-I/SNRVE的Datasheet PDF文件第2页浏览型号24LC08BT-I/SNRVE的Datasheet PDF文件第3页浏览型号24LC08BT-I/SNRVE的Datasheet PDF文件第4页浏览型号24LC08BT-I/SNRVE的Datasheet PDF文件第5页浏览型号24LC08BT-I/SNRVE的Datasheet PDF文件第6页浏览型号24LC08BT-I/SNRVE的Datasheet PDF文件第7页 
24LC08B/16B MODULES  
M
2 ™  
8K/16K I C Serial EEPROMs in ISO Micromodules  
FEATURES  
ISO MODULE LAYOUT  
• ISO 7816 compliant contact locations  
• Single supply with operation from 2.5-5.5V  
• Low power CMOS technology  
VSS  
VDD  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
• Organized as 4 or 8 blocks of 256 bytes  
(4 x 256 x 8) or (8 x 256 x 8)  
2
• 2-wire serial interface bus, I C compatible  
• Schmitt trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (2.5V) and 400kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• ESD protection > 4,000V  
SCL  
SDA  
• 1,000,000 ERASE/WRITE cycles guaranteed  
• Data retention > 200 years  
BLOCK DIAGRAM  
Temperature range  
HV GENERATOR  
- Commercial (C):  
0˚C to +70˚C  
DESCRIPTION  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
The Microchip Technology Inc. 24LC08B/16B are 8K  
and 16K bit Electrically Erasable PROMs in ISO mod-  
ules for smart card applications. The device is orga-  
nized as four or eight blocks of 256 x 8-bit memory with  
a 2-wire serial interface. The 24LC08B and 24LC16B  
also have a page-write capability for up to 16 bytes of  
data.  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1997 Microchip Technology Inc.  
DS21224A-page 1  

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