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24LC08B/SM PDF预览

24LC08B/SM

更新时间: 2024-10-26 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 451K
描述
1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8

24LC08B/SM 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.207 INCH, PLASTIC, SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.7Is Samacsys:N
其他特性:100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 4 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS最大时钟频率 (fCLK):0.1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010XMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:5.28 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1KX8输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:3/5 V认证状态:Not Qualified
座面最大高度:2.03 mm串行总线类型:I2C
最大待机电流:0.00003 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:5.2 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

24LC08B/SM 数据手册

 浏览型号24LC08B/SM的Datasheet PDF文件第2页浏览型号24LC08B/SM的Datasheet PDF文件第3页浏览型号24LC08B/SM的Datasheet PDF文件第4页浏览型号24LC08B/SM的Datasheet PDF文件第5页浏览型号24LC08B/SM的Datasheet PDF文件第6页浏览型号24LC08B/SM的Datasheet PDF文件第7页 
24LC08B/16B MODULES  
M
2 ™  
8K/16K I C Serial EEPROMs in ISO Micromodules  
FEATURES  
ISO MODULE LAYOUT  
• ISO 7816 compliant contact locations  
• Single supply with operation from 2.5-5.5V  
• Low power CMOS technology  
VSS  
VDD  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
• Organized as 4 or 8 blocks of 256 bytes  
(4 x 256 x 8) or (8 x 256 x 8)  
2
• 2-wire serial interface bus, I C compatible  
• Schmitt trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (2.5V) and 400kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• ESD protection > 4,000V  
SCL  
SDA  
• 1,000,000 ERASE/WRITE cycles guaranteed  
• Data retention > 200 years  
BLOCK DIAGRAM  
Temperature range  
HV GENERATOR  
- Commercial (C):  
0˚C to +70˚C  
DESCRIPTION  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
The Microchip Technology Inc. 24LC08B/16B are 8K  
and 16K bit Electrically Erasable PROMs in ISO mod-  
ules for smart card applications. The device is orga-  
nized as four or eight blocks of 256 x 8-bit memory with  
a 2-wire serial interface. The 24LC08B and 24LC16B  
also have a page-write capability for up to 16 bytes of  
data.  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1997 Microchip Technology Inc.  
DS21224A-page 1  

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