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24LC01BH-E/P PDF预览

24LC01BH-E/P

更新时间: 2024-11-24 06:24:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
30页 513K
描述
1K I2C™ Serial EEPROM with Half-Array Write-Protect

24LC01BH-E/P 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
Factory Lead Time:4 weeks风险等级:5.31
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010XXXRJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.271 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT APPLICABLE
电源:3/5 V认证状态:Not Qualified
座面最大高度:5.334 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):4.5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT APPLICABLE
宽度:7.62 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24LC01BH-E/P 数据手册

 浏览型号24LC01BH-E/P的Datasheet PDF文件第2页浏览型号24LC01BH-E/P的Datasheet PDF文件第3页浏览型号24LC01BH-E/P的Datasheet PDF文件第4页浏览型号24LC01BH-E/P的Datasheet PDF文件第5页浏览型号24LC01BH-E/P的Datasheet PDF文件第6页浏览型号24LC01BH-E/P的Datasheet PDF文件第7页 
24AA01H/24LC01BH  
1K I2CSerial EEPROM with Half-Array Write-Protect  
Device Selection Table  
Description:  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
The Microchip Technology Inc. 24AA01H/24LC01BH  
(24XX01H*) is a 1 Kbit Electrically Erasable PROM.  
The device is organized as one block of 128 x 8-bit  
memory with a 2-wire serial interface. Low-voltage  
design permits operation down to 1.7V with standby  
and active currents of only 1 μA and 1 mA, respec-  
tively. The 24XX01H also has a page write capability for  
up to 8 bytes of data. The 24XX01H is available in the  
standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3  
TDFN and MSOP packages, and is also available in  
the 5-lead SOT-23 and SC-70 packages.  
24AA01H  
1.7-5.5  
2.5-5.5  
400 kHz(1)  
400 kHz  
I
24LC01BH  
I, E  
Note 1: 100 kHz for VCC <2.5V  
Features:  
• Single Supply with Operation down to 1.7V for  
24AA01H Devices, 2.5V for 24LC01BH Devices  
• Low-Power CMOS Technology:  
- Read current 1 mA, max.  
Package Types  
- Standby current 1 μA, max. (I-temp)  
• 2-Wire Serial Interface, I2C™ Compatible  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Compatibility  
• Page Write Time 3 ms, typical  
SOIC, TSSOP  
PDIP, MSOP  
A0  
1
8
VCC  
1
2
3
4
8
7
6
5
A0  
A1  
VCC  
WP  
A1  
A2  
2
3
4
7
6
5
WP  
SCL  
A2  
SCL  
SDA  
VSS  
SDA VSS  
• Hardware Write-Protect for Half-Array (40h-7Fh)  
• ESD Protection >4,000V  
SOT-23/SC-70  
TDFN  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
1
VCC  
WP  
A0  
8
7
6
5
WP  
Vcc  
1
5
4
SCL  
2
3
4
A1  
SCL  
SDA  
2
3
A2  
VSS  
Vss  
• Factory Programmable Available  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
TDFN, MSOP, 5-lead SOT-23 and SC-70  
SDA  
• Pb-Free and RoHS Compliant  
Temperature Ranges:  
Note:  
Pins A0, A1 and A2 are not used by the 24XX01H  
(no internal connections).  
- Industrial (I): -40°C to +85°C  
- Automotive (E): -40°C to +125°C  
Block Diagram  
WP  
HV Generator  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
Page Latches  
I/O  
SCL  
YDEC  
SDA  
VCC  
VSS  
Sense Amp.  
R/W Control  
© 2008 Microchip Technology Inc.  
DS22104A-page 1  

24LC01BH-E/P 替代型号

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