是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | TSSOP, TSSOP8,.25 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.37 |
最大时钟频率 (fCLK): | 0.4 MHz | 数据保留时间-最小值: | 200 |
耐久性: | 1000000 Write/Erase Cycles | I2C控制字节: | 1010XXXR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
长度: | 3 mm | 内存密度: | 1024 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 128 words |
字数代码: | 128 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
组织: | 128X8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 反向引出线: | NO |
筛选级别: | AEC-Q100 | 座面最大高度: | 1.2 mm |
串行总线类型: | I2C | 最大待机电流: | 0.000005 A |
最大压摆率: | 0.003 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 4.4 mm |
最长写入周期时间 (tWC): | 5 ms | 写保护: | HARDWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
24LC01BH | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/LT | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/MNY | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/MS | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/OT | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/P | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/SN | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-E/ST | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-I/LT | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P | |
24LC01BH-I/MNY | MICROCHIP |
获取价格 |
1K I2C™ Serial EEPROM with Half-Array Write-P |