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24LC01B-E/MNY PDF预览

24LC01B-E/MNY

更新时间: 2024-11-24 06:24:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
34页 585K
描述
1K I2C™ Serial EEPROM

24LC01B-E/MNY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:HVSON, SOLCC8,.11,20针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.32
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010XXXRJESD-30 代码:R-PDSO-N8
JESD-609代码:e4长度:2 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
反向引出线:NO座面最大高度:1 mm
串行总线类型:I2C最大待机电流:0.000005 A
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

24LC01B-E/MNY 数据手册

 浏览型号24LC01B-E/MNY的Datasheet PDF文件第2页浏览型号24LC01B-E/MNY的Datasheet PDF文件第3页浏览型号24LC01B-E/MNY的Datasheet PDF文件第4页浏览型号24LC01B-E/MNY的Datasheet PDF文件第5页浏览型号24LC01B-E/MNY的Datasheet PDF文件第6页浏览型号24LC01B-E/MNY的Datasheet PDF文件第7页 
24AA01/24LC01B  
1K I2CSerial EEPROM  
Description:  
Device Selection Table  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
The Microchip Technology Inc. 24AA01/24LC01B  
(24XX01*) is a 1 Kbit Electrically Erasable PROM. The  
device is organized as one block of 128 x 8-bit memory  
with a 2-wire serial interface. Low-voltage design  
permits operation down to 1.7V with standby and active  
currents of only 1 μA and 1 mA, respectively. The  
24XX01 also has a page write capability for up to 8  
bytes of data. The 24XX01 is available in the standard  
8-pin PDIP, surface mount SOIC, TSSOP, 2x3 DFN,  
2x3 TDFN and MSOP packages, and is also available  
in the 5-lead SOT-23 and SC-70 packages.  
24AA01  
1.7-5.5  
2.5-5.5  
400 kHz(1)  
400 kHz  
I
24LC01B  
I, E  
Note 1: 100 kHz for VCC <2.5V.  
Features:  
• Single Supply with Operation down to 1.7V for  
24AAXX Devices, 2.5V for 24LCXX Devices  
• Low-Power CMOS Technology:  
- Read current 1 mA, max.  
Package Types  
- Standby current 1 μA, max. (I-temp)  
• 2-Wire Serial Interface, I2C™ Compatible  
• Schmitt Trigger inputs for Noise Suppression  
• Output Slope Control to eliminate Ground Bounce  
• 100 kHz and 400 kHz Compatibility  
• Page Write Time 3 ms, typical  
SOIC, TSSOP  
PDIP, MSOP  
A0  
1
8
VCC  
1
2
3
4
8
7
6
5
A0  
A1  
VCC  
WP  
A1  
A2  
2
3
4
7
6
5
WP  
SCL  
A2  
SCL  
SDA  
VSS  
SDA VSS  
• Hardware Write-Protect  
SOT-23/SC-70  
DFN/TDFN  
• ESD Protection >4,000V  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
1
VCC  
WP  
A0  
8
WP  
Vcc  
1
5
4
SCL  
7
6
5
2
3
4
A1  
SCL  
SDA  
2
3
A2  
VSS  
Vss  
• Factory Programmable Available  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN, TDFN, MSOP, 5-lead SOT-23 and SC-70  
SDA  
• Pb-free and RoHS Compliant  
Temperature Ranges:  
Note:  
Pins A0, A1 and A2 are not used by the 24XX01 (no  
internal connections).  
- Industrial (I): -40°C to +85°C  
- Automotive (E): -40°C to +125°C  
Block Diagram  
WP  
HV Generator  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
Page Latches  
I/O  
SCL  
YDEC  
SDA  
VCC  
VSS  
Sense Amp.  
R/W Control  
© 2009 Microchip Technology Inc.  
DS21711J-page 1  

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