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24FC1025T-I/SN PDF预览

24FC1025T-I/SN

更新时间: 2024-10-30 11:47:23
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 296K
描述
1024K I2C™ CMOS Serial EEPROM

24FC1025T-I/SN 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:5 weeks
风险等级:1.47Is Samacsys:N
其他特性:200 YEARS DATA RETENTION最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010MDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:1048576 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:8
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

24FC1025T-I/SN 数据手册

 浏览型号24FC1025T-I/SN的Datasheet PDF文件第2页浏览型号24FC1025T-I/SN的Datasheet PDF文件第3页浏览型号24FC1025T-I/SN的Datasheet PDF文件第4页浏览型号24FC1025T-I/SN的Datasheet PDF文件第5页浏览型号24FC1025T-I/SN的Datasheet PDF文件第6页浏览型号24FC1025T-I/SN的Datasheet PDF文件第7页 
24AA1025/24LC1025/24FC1025  
1024K I2CCMOS Serial EEPROM  
This device is capable of both random and sequential  
Device Selection Table:  
reads. Reads may be sequential within address  
boundaries 0000h to FFFFh and 10000h to 1FFFFh.  
Functional address lines allow up to four devices on the  
same data bus. This allows for up to 4 Mbits total  
system EEPROM memory. This device is available in  
the standard 8-pin PDIP, SOIC and SOIJ packages.  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
24AA1025  
24LC1025  
24FC1025  
1.7-5.5V  
2.5-5.5V  
1.8-5.5V  
400 kHz†  
400 kHz*  
1 MHz‡  
I
I, E  
I
100 kHz for VCC < 2.5V  
Package Type  
*100 kHz for VCC < 4.5V, E-temp  
400 kHz for VCC < 2.5V  
PDIP  
A0  
1
8
VCC  
Features:  
A1  
A2  
2
3
4
7
6
5
WP  
SCL  
SDA  
• Low-Power CMOS Technology:  
- Read current 450 A, maximum  
- Standby current 5 A, maximum  
• 2-Wire Serial Interface, I2C™ Compatible  
• Cascadable up to Four Devices  
VSS  
SOIJ/SOIC  
1
2
8
7
A0  
VCC  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• 1 MHz Clock for FC Versions  
A1  
A2  
WP  
3
4
6
5
SCL  
SDA  
VSS  
• Page Write Time 3 ms, typical  
• Self-Timed Erase/Write Cycle  
• 128-Byte Page Write Buffer  
Block Diagram  
• Hardware Write-Protect  
• ESD Protection >400V  
A0A1 WP  
HV Generator  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
• Factory Programming Available  
• Packages include 8-lead PDIP, SOIJ and SOIC  
• Pb-Free and RoHS Compliant  
Temperature Ranges:  
EEPROM  
Array  
XDEC  
Page Latches  
I/O  
- Industrial (I):  
-40C to +85C  
SCL  
YDEC  
- Automotive (E): -40C to +125C  
SDA  
Description:  
VCC  
Sense AMP  
R/W Control  
VSS  
The Microchip Technology Inc. 24AA1025/24LC1025/  
24FC1025 (24XX1025*) is a 128K x 8 (1024K bit)  
Serial Electrically Erasable PROM, capable of  
operation across a broad voltage range (1.7V to 5.5V).  
It has been developed for advanced, low-power  
applications such as personal communications or data  
acquisition. This device has both byte write and page  
write capability of up to 128 bytes of data.  
*24XX1025 is used in this document as a generic part number  
for the 24AA1025/24LC1025/24FC1025 devices.  
2010 Microchip Technology Inc.  
DS21941G-page 1  

24FC1025T-I/SN 替代型号

型号 品牌 替代类型 描述 数据表
24FC1025-I/SN MICROCHIP

完全替代

1024K I2C™ CMOS Serial EEPROM
24LC1025-I/SM MICROCHIP

类似代替

1024K I2C⑩ CMOS Serial EEPROM
24AA1025-I/SM MICROCHIP

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1024K I2C⑩ CMOS Serial EEPROM

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