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24C01BT-E/SN PDF预览

24C01BT-E/SN

更新时间: 2024-02-03 22:05:05
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
10页 111K
描述
1K/2K 5.0V I2C⑩ Serial EEPROM

24C01BT-E/SN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.71
最大时钟频率 (fCLK):0.1 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010XXXR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.89 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

24C01BT-E/SN 数据手册

 浏览型号24C01BT-E/SN的Datasheet PDF文件第2页浏览型号24C01BT-E/SN的Datasheet PDF文件第3页浏览型号24C01BT-E/SN的Datasheet PDF文件第4页浏览型号24C01BT-E/SN的Datasheet PDF文件第5页浏览型号24C01BT-E/SN的Datasheet PDF文件第6页浏览型号24C01BT-E/SN的Datasheet PDF文件第7页 
Obsolete Device  
Please use 24LC01B or 24LC02B.  
24C01B/02B  
1K/2K 5.0V I2CSerial EEPROM  
FEATURES  
PACKAGE TYPES  
PDIP  
• Single supply with 5.0V operation  
• Low power CMOS technology  
NC  
NC  
NC  
1
2
3
8
7
6
Vcc  
WP  
- 1 mA active current typical  
- 10 µA standby current typical at 5.0V  
- 5 µA standby current typical at 5.0V  
• Organized as a single block of 128 bytes (128 x 8)  
or 256 bytes (256 x 8)  
• 2-wire serial interface bus, I2C compatible  
• 100 kHz compatibility  
SCL  
SDA  
Vss  
4
5
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 8 bytes  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
• ESD protection > 3,000V  
• 1,000,000 ERASE/WRITE cycles guaranteed  
Data retention > 200 years  
• 8 pin DIP or SOIC package  
SOIC  
1
2
8
NC  
NC  
NC  
Vcc  
7
6
5
WP  
• Available for extended temperature ranges  
3
4
SCL  
SDA  
- Automotive (E):  
-40°C to +125°C  
Vss  
DESCRIPTION  
The Microchip Technology Inc. 24C01B and 24C02B  
are 1K bit and 2K bit Electrically Erasable PROMs. The  
devices are organized as a single block of 128 x 8 bit  
or 256 x 8 bit memory with a 2-wire serial interface.  
The 24C01B and 24C02B also have page-write capa-  
bility for up to 8 bytes of data. The 24C01B and 24C02B  
are available in the standard 8-pin DIP and an 8-pin  
surface mount SOIC package.  
BLOCK DIAGRAM  
WP  
HV GENERATOR  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
These devices are for extended temperature  
applications only. It is recommended that all other  
applications use Microchip’s 24LC01B/02B.  
EEPROM  
ARRAY  
XDEC  
PAGE LATCHES  
SDA SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
2004 Microchip Technology Inc.  
Preliminary  
DS21233B-page 1  

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