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24AA65-SM

更新时间: 2024-09-12 22:38:27
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 108K
描述
64K 1.8V I 2 C O Smart Serial O EEPROM

24AA65-SM 数据手册

 浏览型号24AA65-SM的Datasheet PDF文件第2页浏览型号24AA65-SM的Datasheet PDF文件第3页浏览型号24AA65-SM的Datasheet PDF文件第4页浏览型号24AA65-SM的Datasheet PDF文件第5页浏览型号24AA65-SM的Datasheet PDF文件第6页浏览型号24AA65-SM的Datasheet PDF文件第7页 
24AA65  
2
64K 1.8V I C Smart Serial EEPROM  
FEATURES  
PACKAGE TYPES  
PDIP  
• Voltage operating range: 1.8V to 6.0V  
- Peak write current 3 mA at 6.0V  
- Maximum read current 150 µA at 6.0V  
- Standby current 1 µA typical  
• Industry standard two wire bus protocol I2C  
compatible  
A0  
A1  
1
2
8
7
VCC  
NC  
A2  
3
4
6
5
SCL  
SDA  
• 8 byte page, or byte modes available  
• 2 ms typical write cycle time, byte or page  
• 64-byte line input cache for fast write loads  
• Up to 8 devices may be connected to the same  
bus for up to 512K bits total memory  
• 100 kHz (1.8V) and 400 kHz (5.0V) compatibility  
• Programmable block security options  
• Programmable endurance options  
• Schmitt trigger, filtered inputs for noise suppres-  
sion  
VSS  
SOIC  
1
2
8
A0  
VCC  
NC  
7
6
5
A1  
A2  
3
4
• Output slope control to eliminate ground bounce  
• Self-timed ERASE and WRITE cycles  
• Power on/off data protection circuitry  
• Endurance:  
SCL  
SDA  
VSS  
- 10,000,000 E/W cycles guaranteed for a High  
Endurance Block  
- 1,000,000 E/W cycles guaranteed for a Stan-  
dard Endurance Block  
• Electrostatic discharge protection > 4000V  
• Data retention > 200 years  
BLOCK DIAGRAM  
HV Generator  
A0..A2  
• 8-pin PDIP/SOIC packages  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM ARRAY  
Temperature ranges  
- Commercial (C):  
XDEC  
Page Latches  
0°C to +70°C  
Buffer  
DESCRIPTION  
I/O  
SCL  
The Microchip Technology Inc. 24AA65 is a “smart” 8K x  
8 Serial Electrically Erasable PROM. This device has  
been developed for advanced, low power applications  
such as personal communications, and provides the  
systems designer with flexibility through the use of many  
new user-programmable features. It is capable of opera-  
tion down to 1.8V, the end-of-life voltage for 2 “AA” bat-  
tery cells for most popular battery technologies.The  
24AA65 offers a relocatable 4K bit block of ultra-high-  
endurance memory for data that changes frequently. The  
remainder of the array, or 60K bits, is rated at 1,000,000  
ERASE/WRITE (E/W) cycles guaranteed. The 24AA65  
features an input cache for fast write loads with a capac-  
ity of eight pages, or 64 bytes. This device also features  
programmable security options for E/W protection of crit-  
ical data and/or code of up to fifteen 4K blocks. Func-  
tional address lines allow the connection of up to eight  
YDEC  
SDA  
Vcc  
Vss  
Sense AMP  
R/W Control  
24LC65's on the same bus for up to 512K bits contigu-  
ous EEPROM memory. Advanced CMOS technology  
makes this device ideal for low-power non-volatile code  
and data applications. The 24AA65 is available in the  
standard 8-pin plastic DIP and 8-pin surface mount  
SOIC package.  
I2C is a trademark of Philips Corporation.  
Smart Serial is a trademark of Microchip Technology Inc.  
1996 Microchip Technology Inc.  
DS21056F-page 1  
This document was created with FrameMaker 4 0 4  

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