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24AA512T-E/MF PDF预览

24AA512T-E/MF

更新时间: 2024-11-13 04:25:23
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 476K
描述
512K I2C⑩ CMOS Serial EEPROM

24AA512T-E/MF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:HVSON,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.73
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-N8
JESD-609代码:e3长度:6 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:5 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

24AA512T-E/MF 数据手册

 浏览型号24AA512T-E/MF的Datasheet PDF文件第2页浏览型号24AA512T-E/MF的Datasheet PDF文件第3页浏览型号24AA512T-E/MF的Datasheet PDF文件第4页浏览型号24AA512T-E/MF的Datasheet PDF文件第5页浏览型号24AA512T-E/MF的Datasheet PDF文件第6页浏览型号24AA512T-E/MF的Datasheet PDF文件第7页 
24AA512/24LC512/24FC512  
512K I2CCMOS Serial EEPROM  
Device Selection Table  
Description:  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
The Microchip Technology Inc. 24AA512/24LC512/  
24FC512 (24XX512*) is a 64K x 8 (512 Kbit) Serial  
Electrically Erasable PROM, capable of operation  
across a broad voltage range (1.8V to 5.5V). It has  
been developed for advanced, low-power applications  
such as personal communications and data acquisi-  
tion. This device also has a page write capability of up  
to 128 bytes of data. This device is capable of both  
random and sequential reads up to the 512K boundary.  
Functional address lines allow up to eight devices on  
the same bus, for up to 4 Mbit address space. This  
device is available in the standard 8-pin plastic DIP,  
SOIC, DFN and 14-lead TSSOP packages.  
24AA512  
24LC512  
24FC512  
1.8-5.5V  
2.5-5.5V  
2.5-5.5V  
400 kHz(1)  
400 kHz  
1 MHz  
I
I, E  
I
Note 1: 100 kHz for VCC < 2.5V  
Features:  
• Low-power CMOS technology:  
- Maximum write current 5 mA at 5.5V  
- Maximum read current 400 μA at 5.5V  
- Standby current 100 nA, typical at 5.5V  
• 2-wire serial interface bus, I2Ccompatible  
• Cascadable for up to eight devices  
• Self-timed erase/write cycle  
Block Diagram  
A0 A1 A2 WP  
HV Generator  
• 128-byte Page Write mode available  
• 5 ms max. write cycle time  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
• Hardware write-protect for entire array  
• Schmitt Trigger inputs for noise suppression  
• 1,000,000 erase/write cycles  
Page Latches  
I/O  
• Electrostatic discharge protection > 4000V  
• Data retention > 200 years  
SCL  
YDEC  
SDA  
• 8-pin PDIP, SOIC (208 mil), and DFN packages  
• 14-lead TSSOP package  
VCC  
VSS  
• Pb-free finishes available  
Sense Amp.  
R/W Control  
Temperature ranges:  
- Industrial (I):  
-40°C to +85°C  
- Automotive (E): -40°C to +125°C  
Package Type  
PDIP  
SOIC  
TSSOP  
DFN  
14  
13  
12  
11  
10  
9
1
VCC  
A0  
A1  
A0  
1
8
VCC  
1
2
3
4
A0  
A1  
8
7
6
5
VCC  
WP  
1
2
3
4
8
7
6
5
A0  
A1  
VCC  
WP  
2
3
4
5
6
7
WP  
NC  
NC  
NC  
A1  
A2  
2
3
7
6
WP  
NC  
NC  
NC  
A2  
SCL  
SDA  
SCL  
A2  
SCL  
SDA  
VSS  
A2  
SCL  
SDA  
VSS  
4
5
SDA  
VSS  
8
VSS  
* 24XX512 is used in this document as a generic part number for the 24AA512/24LC512/24FC512 devices.  
© 2005 Microchip Technology Inc.  
DS21754G-page 1  

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