是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DIP | 包装说明: | DIP, DIP8,.3 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
Factory Lead Time: | 15 weeks | 风险等级: | 1.38 |
Is Samacsys: | N | 最大时钟频率 (fCLK): | 0.4 MHz |
数据保留时间-最小值: | 200 | 耐久性: | 1000000 Write/Erase Cycles |
I2C控制字节: | 1010MMMR | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.271 mm |
内存密度: | 2048 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 256 words |
字数代码: | 256 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 256X8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | NOT APPLICABLE |
电源: | 1.8/5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.334 mm | 串行总线类型: | I2C |
最大待机电流: | 0.000001 A | 子类别: | EEPROMs |
最大压摆率: | 0.003 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
宽度: | 7.62 mm | 最长写入周期时间 (tWC): | 5 ms |
写保护: | HARDWARE | Base Number Matches: | 1 |
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