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24AA16-I/PG PDF预览

24AA16-I/PG

更新时间: 2024-11-24 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 79K
描述
2K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, ROHS COMPLIANT, PLASTIC, MS-001, DIP-8

24AA16-I/PG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.23
其他特性:2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED最大时钟频率 (fCLK):0.1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010MMMRJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.46 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5 V认证状态:Not Qualified
座面最大高度:4.32 mm串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):2.5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24AA16-I/PG 数据手册

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24AA16  
2
16K 1.8V I C Serial EEPROM  
PACKAGE TYPES  
PDIP  
FEATURES  
• Single supply with operation down to 1.8V  
• Low power CMOS technology  
A0  
1
8
7
VCC  
WP  
- 1 mA active current typical  
A1  
2
- 10 µA standby current typical at 5.5V  
- 3 µA standby current typical at 1.8V  
• Organized as 8 blocks of 256 bytes (8 x 256 x 8)  
• 2-wire serial interface bus, I2C compatible  
A2  
3
4
6
5
SCL  
SDA  
VSS  
• Schmitt trigger, filtered inputs for noise suppres-  
sion  
• Output slope control to eliminate ground bounce  
• 100 kHz (1.8V) and 400 kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
8-lead  
SOIC  
1
8
7
A0  
A1  
VCC  
2
3
4
WP  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
6
5
A2  
SCL  
SDA  
VSS  
• ESD protection > 4,000V  
• 10,000,000 erase/write cycles guaranteed  
• Data retention > 200 years  
14-lead SOIC  
14  
1
2
3
4
5
6
7
• 8-pin DIP, 8-lead or 14-lead SOIC packages  
• Available for extended temperature ranges  
NC  
NC  
A0  
13  
12  
11  
V
CC  
- Commercial (C):  
- Industrial (I):  
0˚C to +70°C  
-40°C to +85°C  
WP  
NC  
A1  
NC  
DESCRIPTION  
10  
9
SCL  
SDA  
NC  
A2  
The Microchip Technology Inc. 24AA16 is a 1.8 volt 16K  
bit Electrically Erasable PROM. The device is orga-  
nized as eight blocks of 256 x 8-bit memory with a 2-  
wire serial interface. Low voltage design permits oper-  
ation down to 1.8 volts with standby and active currents  
of only 3 µA and 1 mA, respectively. The 24AA16 also  
has a page-write capability for up to 16 bytes of data.  
The 24AA16 is available in the standard 8-pin DIP and  
both 8-lead and 14-lead surface mount SOIC pack-  
ages.  
V
SS  
8
NC  
BLOCK DIAGRAM  
WP  
HV GENERATOR  
I/O  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
CONTROL  
LOGIC  
XDEC  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1996 Microchip Technology Inc.  
DS21054E-page 1  
This document was created with FrameMaker 4 0 4  

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