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24AA128T-I/SNG PDF预览

24AA128T-I/SNG

更新时间: 2024-11-02 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 181K
描述
16K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, ROHS COMPLIANT, PLASTIC, SOIC-8

24AA128T-I/SNG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:ROHS COMPLIANT, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.24
其他特性:1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

24AA128T-I/SNG 数据手册

 浏览型号24AA128T-I/SNG的Datasheet PDF文件第2页浏览型号24AA128T-I/SNG的Datasheet PDF文件第3页浏览型号24AA128T-I/SNG的Datasheet PDF文件第4页浏览型号24AA128T-I/SNG的Datasheet PDF文件第5页浏览型号24AA128T-I/SNG的Datasheet PDF文件第6页浏览型号24AA128T-I/SNG的Datasheet PDF文件第7页 
M
24AA128/24LC128  
128K I C CMOS Serial EEPROM  
2 ™  
DEVICE SELECTION TABLE  
PACKAGE TYPE  
PDIP  
Part  
Number  
VCC  
Range  
Max Clock  
Frequency  
Temp  
Ranges  
A0  
1
8
Vcc  
24AA128  
24LC128  
1.8-5.5V  
2.5-5.5V  
400 kHz  
I
A1  
A2  
2
3
4
7
6
5
WP  
400 kHz  
I, E  
SCL  
SDA  
100 kHz for VCC < 2.5V.  
100 kHz for E temperature range.  
Vss  
FEATURES  
• Low power CMOS technology  
SOIC  
8
1
- Maximum write current 3 mA at 5.5V  
- Maximum read current 400 µA at 5.5V  
- Standby current 100 nA typical at 5.5V  
• 2-wire serial interface bus, I2C compatible  
• Cascadable for up to eight devices  
• Self-timed ERASE/WRITE cycle  
• 64-byte page-write mode available  
• 5 ms max write-cycle time  
A0  
VCC  
WP  
7
6
5
2
3
4
A1  
SCL  
SDA  
A2  
VSS  
TSSOP  
1
14  
13  
12  
11  
10  
9
Vcc  
A0  
A1  
• Hardware write protect for entire array  
2
3
4
5
6
7
WP  
• Output slope control to eliminate ground bounce  
• Schmitt trigger inputs for noise suppression  
• 1,000,000 erase/write cycles guaranteed  
• Electrostatic discharge protection > 4000V  
• Data retention > 200 years  
NC  
NC  
NC  
NC  
NC  
NC  
A2  
SCL  
SDA  
8
Vss  
• 8-pin PDIP and SOIC (150 and 208 mil) packages  
• 14-pin TSSOP package  
Temperature ranges:  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
BLOCK DIAGRAM  
WP  
A0…A2  
HV GENERATOR  
DESCRIPTION  
The Microchip Technology Inc. 24AA128/24LC128  
(24xx128*) is a 16K x 8 (128K bit) Serial Electrically  
Erasable PROM, capable of operation across a broad  
voltage range (1.8V to 5.5V). It has been developed for  
advanced, low power applications such as personal  
communications or data acquisition. This device also  
has a page-write capability of up to 64 bytes of data.  
This device is capable of both random and sequential  
reads up to the 128K boundary. Functional address  
lines allow up to eight devices on the same bus, for up  
to 1M bit address space. This device is available in the  
standard 8-pin plastic DIP, 8-pin SOIC (150 and  
208 mil), and 14-pin TSSOP packages.  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
PAGE LATCHES  
I/O  
SCL  
YDEC  
SDA  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
*24xx128 is used in this document as a generic part number for the 24AA128/24LC128 devices.  
1998 Microchip Technology Inc.  
DS21191B-page 1  

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