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24AA128T-I/SM PDF预览

24AA128T-I/SM

更新时间: 2024-11-05 04:25:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
26页 427K
描述
128K I2C CMOS Serial EEPROM

24AA128T-I/SM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:ROHS COMPLIANT, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.38
其他特性:1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:5.26 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:2.03 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:5.25 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

24AA128T-I/SM 数据手册

 浏览型号24AA128T-I/SM的Datasheet PDF文件第2页浏览型号24AA128T-I/SM的Datasheet PDF文件第3页浏览型号24AA128T-I/SM的Datasheet PDF文件第4页浏览型号24AA128T-I/SM的Datasheet PDF文件第5页浏览型号24AA128T-I/SM的Datasheet PDF文件第6页浏览型号24AA128T-I/SM的Datasheet PDF文件第7页 
24AA128/24LC128/24FC128  
128K I2CCMOS Serial EEPROM  
Temperature ranges:  
Device Selection Table  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
Part  
VCC  
Max. Clock  
Frequency  
Temp.  
Ranges  
Number  
Range  
24AA128  
1.7-5.5V  
400 kHz(1)  
I
Description:  
24LC128  
24FC128  
2.5-5.5V  
1.7-5.5V  
400 kHz  
1 MHz(2)  
I, E  
I
The Microchip Technology Inc. 24AA128/24LC128/  
24FC128 (24XX128*) is a 16K x 8 (128 Kbit) Serial  
Electrically Erasable PROM (EEPROM), capable of  
operation across a broad voltage range (1.7V to 5.5V).  
It has been developed for advanced, low-power  
applications such as personal communications or data  
acquisition. This device also has a page write capabil-  
ity of up to 64 bytes of data. This device is capable of  
both random and sequential reads up to the 128K  
boundary. Functional address lines allow up to eight  
devices on the same bus, for up to 1 Mbit address  
space. This device is available in the standard 8-pin  
plastic DIP, SOIC (3.90 mm and 5.28 mm), TSSOP,  
MSOP and DFN packages.  
Note 1: 100 kHz for VCC < 2.5V.  
2: 400 kHz for VCC < 2.5V.  
Features:  
• Single supply with operation down to 1.7V for  
24AA128/24FC128 devices, 2.5V for 24LC128  
devices  
• Low-power CMOS technology:  
- Write current 3 mA, typical  
- Standby current 100 nA, typical  
• 2-wire serial interface, I2C™ compatible  
• Cascadable up to eight devices  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz and 400 kHz clock compatibility  
• 1 MHz clock for FC versions  
Block Diagram  
A0 A1 A2WP  
HV Generator  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
• Page write time 5 ms, typical  
• Self-timed erase/write cycle  
Page Latches  
• 64-byte page write buffer <adjust per device>  
• Hardware write-protect  
SCL  
I/O  
SDA  
YDEC  
• ESD protection >4000V  
• More than 1 million erase/write cycles  
• Data retention > 200 years  
VCC  
VSS  
• Factory programming available  
Sense Amp.  
R/W Control  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN and MSOP packages  
• Pb-free and RoHS compliant  
*24XX128 is used in this document as a generic part number  
for the 24AA128/24LC128/24FC128 devices.  
Package Types  
PDIP/SOIC  
TSSOP/MSOP*  
DFN  
A0  
1
8
VCC  
1
2
8
7
1
2
3
4
A0  
A1  
8
7
6
5
VCC  
WP  
A0  
A1  
VCC  
WP  
A1  
A2  
2
3
4
7
6
5
WP  
A2  
SCL  
SDA  
SCL  
SDA  
3
4
6
5
A2  
SCL  
SDA  
VSS  
VSS  
VSS  
Note: * Pins A0 and A1 are no-connects for the MSOP package only.  
© 2007 Microchip Technology Inc.  
DS21191P-page 1  

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