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24AA08E/MC PDF预览

24AA08E/MC

更新时间: 2024-11-24 13:03:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 79K
描述
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, DFN-8

24AA08E/MC 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DFN
包装说明:3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, DFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.21
Is Samacsys:N最大时钟频率 (fCLK):0.1 MHz
JESD-30 代码:R-PDSO-N8JESD-609代码:e3
长度:3 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

24AA08E/MC 数据手册

 浏览型号24AA08E/MC的Datasheet PDF文件第2页浏览型号24AA08E/MC的Datasheet PDF文件第3页浏览型号24AA08E/MC的Datasheet PDF文件第4页浏览型号24AA08E/MC的Datasheet PDF文件第5页浏览型号24AA08E/MC的Datasheet PDF文件第6页浏览型号24AA08E/MC的Datasheet PDF文件第7页 
24AA04/08  
2
4K/8K 1.8V I C Serial EEPROMs  
PACKAGE TYPES  
DIP  
FEATURES  
• Single supply with operation down to 1.8V  
• Low power CMOS technology  
A0  
1
8
7
VCC  
WP  
A1  
2
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
- 3 µA standby current typical at 1.8V  
A2  
3
4
6
5
SCL  
SDA  
• Organized as 2 or 4 blocks of 256 bytes  
(2 x 256 x 8) or (4 x 256 x 8)  
VSS  
• 2-wire serial interface bus, I2C compatible  
• Schmitt trigger, filtered inputs for noise suppres-  
sion  
8-lead  
SOIC  
1
8
A0  
VCC  
WP  
• Output slope control to eliminate ground bounce  
• 100 kHz (1.8V) and 400 kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
2
3
4
7
6
5
A1  
A2  
SCL  
SDA  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
VSS  
14-Lead  
SOIC  
• ESD protection > 4,000V  
14  
1
2
3
4
5
6
7
NC  
NC  
A0  
• 1,000,000 ERASE/WRITE cycles guaranteed  
• Data retention > 200 years  
13  
12  
11  
VCC  
WP  
NC  
• 8-pin DIP, 8-lead or 14-lead SOIC packages  
• Available for extended temperature ranges  
A1  
NC  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40°C to +85°C  
10  
9
SCL  
SDA  
NC  
A2  
VSS  
NC  
DESCRIPTION  
8
The Microchip Technology Inc. 24AA04/08 is a 4K bit or  
8K bit Electrically Erasable PROM. The device is orga-  
nized as two or four blocks of 256 x 8-bit memory with  
a two wire serial interface. Low voltage design permits  
operation down to 1.8 volts with standby and active cur-  
rents of only 3 µA and 1 mA respectively. The 24AA04/  
08 also has a page-write capability for up to 16 bytes of  
data. The 24AA04/08 is available in the standard 8-pin  
DIP and both 8-lead and 14-lead surface mount SOIC  
packages.  
BLOCK DIAGRAM  
WP  
HV GENERATOR  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM  
ARRAY  
XDEC  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
I2C is a trademark of Philips Corporation.  
1996 Microchip Technology Inc.  
DS21053E-page 1  
This document was created with FrameMaker 4 0 4  

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