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24AA02H-E/SN PDF预览

24AA02H-E/SN

更新时间: 2024-02-07 08:55:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
30页 514K
描述
2K I2C™ Serial EEPROM with Half-Array Write-Protect

24AA02H-E/SN 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LSSOP,Reach Compliance Code:compliant
Factory Lead Time:18 weeks风险等级:1.62
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G5
JESD-609代码:e3长度:2.9 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:5
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
筛选级别:TS 16949座面最大高度:1.45 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1.55 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

24AA02H-E/SN 数据手册

 浏览型号24AA02H-E/SN的Datasheet PDF文件第2页浏览型号24AA02H-E/SN的Datasheet PDF文件第3页浏览型号24AA02H-E/SN的Datasheet PDF文件第4页浏览型号24AA02H-E/SN的Datasheet PDF文件第5页浏览型号24AA02H-E/SN的Datasheet PDF文件第6页浏览型号24AA02H-E/SN的Datasheet PDF文件第7页 
24AA02H/24LC02BH  
2K I2CSerial EEPROM with Half-Array Write-Protect  
Device Selection Table  
Description:  
Part  
Number  
VCC  
Range  
Max. Clock  
Frequency  
Temp.  
Ranges  
The Microchip Technology Inc. 24AA02H/24LC02BH  
(24XX02H*) is a 2 Kbit Electrically Erasable PROM.  
The device is organized as one block of 256 x 8-bit  
memory with a 2-wire serial interface. Low-voltage  
design permits operation down to 1.7V, with standby  
and active currents of only 1 μA and 1 mA, respec-  
tively. The 24XX02H also has a page write capability for  
up to 8 bytes of data. The 24XX02H is available in the  
standard 8-pin PDIP, surface mount SOIC, TSSOP, 2x3  
TDFN and MSOP packages, and is also available in  
the 5-lead SOT-23 and SC-70 packages.  
24AA02H  
1.7-5.5  
2.5-5.5  
400 kHz(1)  
400 kHz  
I
24LC02BH  
I, E  
Note 1: 100 kHz for VCC <2.5V  
Features:  
• Single Supply with Operation down to 1.7V for  
24AA02H Devices, 2.5V for 24LC02BH Devices  
• Low-Power CMOS Technology:  
- Read current 1 mA, max.  
Package Types  
- Standby current 1 μA, max. (I-temp)  
• 2-Wire Serial Interface, I2C™ Compatible  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• Page Write Time 3 ms, typical  
SOIC, TSSOP  
PDIP, MSOP  
A0  
1
8
VCC  
1
2
3
4
8
7
6
5
A0  
A1  
VCC  
WP  
A1  
A2  
2
3
4
7
6
5
WP  
SCL  
A2  
SCL  
SDA  
VSS  
SDA VSS  
• Self-Timed Erase/Write Cycle  
SOT-23/SC-70  
TDFN  
• 8-Byte Page Write Buffer  
• Hardware Write-Protect for Half-Array (80h-FFh)  
• ESD Protection >4,000V  
1
VCC  
WP  
A0  
8
7
6
5
WP  
Vcc  
1
5
4
SCL  
2
3
4
A1  
SCL  
SDA  
2
3
A2  
VSS  
Vss  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
SDA  
• Factory Programming Available  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
TDFN, MSOP, 5-lead SOT-23 and SC-70  
Note:  
Pins A0, A1 and A2 are not used by the 24XX02H  
(no internal connections).  
• Pb-Free and RoHS Compliant  
Temperature Ranges:  
Block Diagram  
- Industrial (I): -40°C to +85°C  
- Automotive (E): -40°C to +125°C  
HV  
Generator  
WP  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
Page  
Latches  
I/O  
SCL  
YDEC  
SDA  
VCC  
VSS  
Sense Amp.  
R/W Control  
© 2008 Microchip Technology Inc.  
DS22105A-page 1  

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