5秒后页面跳转
23K640-E/ST PDF预览

23K640-E/ST

更新时间: 2024-11-14 05:56:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路静态存储器光电二极管时钟
页数 文件大小 规格书
26页 346K
描述
64K SPI Bus Low-Power Serial SRAM

23K640-E/ST 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:TSSOP, TSSOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:8 weeks
风险等级:5.31Is Samacsys:N
最长访问时间:32 ns最大时钟频率 (fCLK):16 MHz
I/O 类型:SEPARATEJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:1
功能数量:1端口数量:1, (3 LINE)
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:8KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00001 A最小待机电流:2.7 V
子类别:SRAMs最大压摆率:0.01 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

23K640-E/ST 数据手册

 浏览型号23K640-E/ST的Datasheet PDF文件第2页浏览型号23K640-E/ST的Datasheet PDF文件第3页浏览型号23K640-E/ST的Datasheet PDF文件第4页浏览型号23K640-E/ST的Datasheet PDF文件第5页浏览型号23K640-E/ST的Datasheet PDF文件第6页浏览型号23K640-E/ST的Datasheet PDF文件第7页 
23A640/23K640  
64K SPI Bus Low-Power Serial SRAM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
23K640  
23A640  
2.7-3.6V  
32 Byte  
32 Byte  
I, E  
I
P, SN, ST  
P, SN, ST  
1.5-1.95V  
Features:  
Description:  
• Max. Clock 20 MHz  
The Microchip Technology Inc. 23X640 are 64 Kbit  
Serial SRAM devices. The memory is accessed via a  
simple Serial Peripheral Interface (SPI) compatible  
serial bus. The bus signals required are a clock input  
(SCK) plus separate data in (SI) and data out (SO)  
lines. Access to the device is controlled through a Chip  
Select (CS) input.  
• Low-Power CMOS Technology:  
- Read Current: 3 mA at 1 MHz  
- Standby Current: 4 μA Max. at +85°C  
• 8192 x 8-bit Organization  
• 32-Byte Page  
• HOLD pin  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused,  
transitions on its inputs will be ignored, with the  
exception of Chip Select, allowing the host to service  
higher priority interrupts.  
• Flexible Operating modes:  
- Byte read and write  
- Page mode (32 Byte Page)  
- Sequential mode  
The 23X640 is available in standard packages  
including 8-lead PDIP and SOIC, and advanced  
packaging including 8-lead TSSOP.  
• Sequential Read/Write  
• High Reliability  
Temperature Ranges Supported:  
- Industrial (I):  
-40°C to +85°C  
-40°C to +125°C  
Package Types (not to scale)  
- Automotive (E):  
• Pb-Free and RoHS Compliant, Halogen Free  
Pin Function Table  
Name  
Function  
PDIP/SOIC/TSSOP  
(P, SN, ST)  
CS  
SO  
Chip Select Input  
Serial Data Output  
Ground  
VSS  
SI  
CS  
SO  
VCC  
1
2
8
7
Serial Data Input  
Serial Clock Input  
Hold Input  
HOLD  
SCK  
SI  
SCK  
HOLD  
VCC  
3
4
6
5
NC  
V
SS  
Supply Voltage  
© 2009 Microchip Technology Inc.  
DS22126C-page 1  

23K640-E/ST 替代型号

型号 品牌 替代类型 描述 数据表
23K640-E/SN MICROCHIP

完全替代

64K SPI Bus Low-Power Serial SRAM
23K640-I/ST MICROCHIP

类似代替

64K SPI Bus Low-Power Serial SRAM

与23K640-E/ST相关器件

型号 品牌 获取价格 描述 数据表
23K640-I/P MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640-I/SN MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640-I/ST MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640T-E/P MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640T-E/SN MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640T-E/ST MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640T-I/P MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640T-I/SN MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23K640T-I/ST MICROCHIP

获取价格

64K SPI Bus Low-Power Serial SRAM
23L12810-10 Macronix

获取价格

128M-BIT (8M x 16) MASK ROM (SOP ONLY)