Datasheet > 216MS8E

216MS8E

更新时间： 2024-11-07 02:55:43

品牌	Logo	应用领域
HITTITE		局域网
页数	文件大小	规格书
6页	240K
描述
GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz

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216MS8E 数据手册

HMC216MS8 / 216MS8E

v02.0705

GaAs MMIC SMT DOUBLE-BALANCED FET

MIXER, 1.3 - 2.5 GHz

Typical Applications

Features

The HMC216MS8 / HMC216MS8E is ideal for:

IP3 (Input): +25 dBm @ +11 dBm LO

LO Range = +3 to +11 dBm

Conversion Loss: 8.5 dB

LO / RF Isolation: 32 dB

• Base Stations

• WirelessLAN

• PCMCIA

• Portable Wireless

Functional Diagram

General Description

The HMC216MS8 & HMC216MS8E are ultra min-

iature double-balanced FET mixers in 8 lead plastic

surface mount packages (MSOP). This MMIC mixer is

constructed of switched GaAs FETs and novel planar

transformer baluns on the chip. In addition to an LO

drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9

to -1.6 Vdc is required. The device can be used as an

upconverter or downconverter for 1900 or 2400 MHz

applications. The consistent MMIC performance will

improve system operation and assure regulatory com-

pliance.

Electrical Specifications, T_A= +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc

LO = +11 dBm

LO = +7 dBm

Typ.

LO = +3 dBm

Parameter

Units

Min.

Typ.

Max.

Min.

Max.

Min.

Typ.

Max.

Frequency Range, RF & LO

Frequency Range, IF

Conversion Loss

1.3 - 2.5

1.6 - 2.3

DC - 0.5

8.5

1.7 - 2.0

GHz

DC - 0.65

DC - 0.4

10.5

Noise Figure (SSB)

LO to RF Isolation

8.5

LO to IF Isolation

IP3 (Input)

dBm

1 dB Gain Compression (Input)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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