Datasheet > 20T06BI-BW

20T06BI-BW

更新时间： 2024-11-21 11:46:15

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅三端双向交流开关
页数	文件大小	规格书
5页	1171K
描述
TRIACs, 20A Sunbberless

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20T06BI-BW 数据手册

RoHS

20T Series _RoHS

SEMICONDUCTOR

TRIACs, 20A

Sunbberless

FEATURES

Medium current triac

Low thermal resistance with clip bonding

Low thermal resistance insulation ceramic

for insulated TO-220AB & TO-3P package

Clip assembly

20T series are UL certified (File ref: E320098)

Packages are RoHS compliant

TO-220AB (non-Insulated)

TO-220AB (lnsulated)

(20TxxA)

(20TxxAI)

APPLICATIONS

The snubberless concept offer suppression of RC

network and it is suitable for applications such as

phase control and static switching on inductive or

resistive load.

Due to their clip assembly techinque, they provide

a superior performance in surge current handling

capabilities.

By using an internal ceramic pad, the 20T series

provides voltage insulated tab (rated at 2500VRMS)

complying with UL standards.

TO-3P (non-Insulated)

TO-3P (Insulated)

(20TxxB)

(20TxxBI)

MAIN FEATURES

SYMBOL

VALUE

UNIT

I_T(RMS)

TO-263 (D²PAK)

V_DRM/V_RRM

I_GT(Q1)

600 to 1000

35 to 50

(20TxxH)

ABSOLUTE MAXIMUM RATINGS

VALUE

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

T_c= 90ºC

TO-263/TO-220AB/TO-3P

RMS on-state current (full sine wave)

I_T(RMS)

T_c= 70ºC

t = 20 ms

t = 16.7 ms

TO-220AB insulated/TO-3P insulated

F =50 Hz

F =60 Hz

200

210

200

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

I²t

I²t Value for fusing

A²s

= 10 ms

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

T_j=125ºC

A/µs

F =100 Hz

dI/dt

T_p=20 µs

T_j=125ºC

Peak gate current

I_GM

P_GM

Peak gate power dissipation (tp = 20µs)

P_G(AV)

Average gate power dissipation

T_stg

T_j

Storage temperature range

- 40 to + 150

- 40 to + 125

ºC

Operating junction temperature range

www.nellsemi.com

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