RoHS
20T Series RoHS
SEMICONDUCTOR
TRIACs, 20A
Snubberless
FEATURES
Medium current triac
A2
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
1
2
3
A1
A2
Clip assembly
20T series are UL certified (File ref: E320098)
Packages are RoHS compliant
G
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
(20TxxA)
(20TxxAI)
APPLICATIONS
A2
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
phase control and static switching on inductive or
resistive load.
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
1
2
G
A1
A2
G
By using an internal ceramic pad, the 20T series
provides voltage insulated tab (rated at 2500VRMS)
complying with UL standards.
TO-3P (non-Insulated)
TO-3P (Insulated)
(20TxxB)
(20TxxBI)
A2
MAIN FEATURES
2(A2)
SYMBOL
VALUE
UNIT
A
A1
A2
3(G)
IT(RMS)
G
20
1(A1)
TO-263 (D2PAK)
VDRM/VRRM
IGT(Q1)
V
600 to 1000
35 to 50
(20TxxH)
mA
ABSOLUTE MAXIMUM RATINGS
VALUE
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
Tc = 90ºC
TO-263/TO-220AB/TO-3P
RMS on-state current (full sine wave)
IT(RMS)
A
20
Tc = 70ºC
t = 20 ms
t = 16.7 ms
TO-220AB insulated/TO-3P insulated
F =50 Hz
F =60 Hz
200
210
200
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
I2t
I2t Value for fusing
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
F =100 Hz
50
dI/dt
Tp =20 µs
Tj =125ºC
Tj =125ºC
Peak gate current
IGM
4
A
PGM
10
Peak gate power dissipation (tp = 20µs)
W
PG(AV)
Average gate power dissipation
1
Tstg
Tj
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Operating junction temperature range
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