5秒后页面跳转
20KHA20_2015 PDF预览

20KHA20_2015

更新时间: 2022-02-26 13:16:30
品牌 Logo 应用领域
美国国家仪器公司 - NI /
页数 文件大小 规格书
1页 286K
描述
SBD

20KHA20_2015 数据手册

  
2A Avg.  
200 Volts  
SBD  
20KHA20  
■最大定格 Maximum Ratings  
OUTLINE DRAWING(mm)  
Item  
Symbol  
Conditions  
200  
Unit  
V
VRRM  
Repetitive Peak Reverse Voltage  
Tl=115℃  
2.0  
1.6  
A
Tl=Lead Temperature  
50Hz、正弦半波通電抵抗負荷  
50Hz Half Sine Wave Resistive Load  
IO  
Average Rectified Forward Current  
Ta=36℃  
A
IF(RMS)  
IFSM  
3.14  
A
R.M.S. Forward Current  
50Hz正弦半波,1サイクル,非くり返し  
50Hz Half Sine Wave,1cycle, Non-repetitive  
A
40  
Surge Forward Current  
Tjw  
-40~+150  
-40~+150  
Operating Junction Temperature Range  
度 範 囲  
Tstg  
Storage Temperature Range  
■APPROX. NET WEIGHT:0.38g  
■電気的・熱的特性 Electrical/Thermal Characteristics  
Item  
Symbol  
IRM  
Conditions  
Min.  
Typ. Max. Unit  
Tj=25℃, VRM=VRRM  
Tj=25℃, IFM=3A  
200  
0.90  
17  
μA  
V
Peak Reverse Current  
VFM  
Peak Forward Voltage  
接 合 部 ・ リ ー ド 間  
Rth(j-l)  
Rth(j-a)  
Junction to Lead  
℃/W  
℃/W  
Junction to Lead  
Thermal Resistance  
接 合 部 ・ 周  
Junction to Ambient*  
70  
Junction to Ambient  
*Print Lands =5×5mm, Both sides  
■定格・特性曲線  
FIG.1  
FIG.2  
FIG.3  
0°  
180°  
θ
AVERAGE FORWARD POWER DISSIPATION  
FORWARD CURRENT VS. VOLTAGE  
10  
CONDUCTION ANGLE  
2.4  
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE  
20KHA20  
Tj= 150 °C  
20KHA20  
20KHA20  
10  
D.C.  
2.0  
1.6  
1.2  
0.8  
0.4  
5
RECT 180°  
5
HALF SINE WAVE  
RECT 120°  
2
Tj=25°C  
RECT 60°  
Tj==5011C50°C  
1
2
1
0.5  
0.2  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
0.4  
0.8  
1.2  
1.6  
0
40  
80  
120  
160  
200  
AVERAGE FORWARD CURRENT (A)  
INSTANTANEOUS FORWARD VOLTAGE (V)  
PEAK REVERSE VOLTAGE (V)  
FIG.4  
FIG.5  
FIG.6  
0°  
180°  
0°  
180°  
θ
θ
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE  
AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE  
AVERAGE REVERSE POWER DISSIPATION  
CONDUCTION ANGLE  
CONDUCTION ANGLE  
3.5  
Without fin or P.C. boad, VRM=200V  
20KHA20  
VRM=200V  
20KHA20  
D.C.  
20KHA20  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
3.5  
D.C.  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
D.C.  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
RECT 300°  
RECT 240°  
RECT 180°  
RECT 180°  
HALF SINE WAVE.  
HALF SINE WAVE  
RECT 120°  
RECT 120°
RECT 180°.  
RECT 60 °
RECT 60 °.  
HALF SINE WAVE  
0
40  
80  
120  
160  
200  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
REVERSE VOLTAGE (V)  
AMBIENT TEMPERATURE (°C)  
LEAD TEMPERATURE ( °C)  
FIG.8  
FIG.7  
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE  
SURGE CURRENT RATINGS  
f=50Hz,Half Sine Wave,Non-Repetitive,No Load  
Tj=25°C,Vm=20mVRMS,f=100kHz,Typical Value  
20KHA20  
20KHA20  
100  
50  
40  
30  
20  
10  
0
20  
10  
I
FSM  
0.02s  
0.05  
0.5  
1
2
5
10  
20  
50  
100  
200  
500  
0.02  
0.1  
0.2  
0.5  
1
2
REVERSE VOLTAGE (V)  
TIME (s)  
238  

与20KHA20_2015相关器件

型号 品牌 描述 获取价格 数据表
20KNWW7 ETC General Purpose and Precision Wirewound Resistor

获取价格

20KNWWS4RW ETC General Purpose and Precision Wirewound Resistor

获取价格

20KP100 MICROSEMI Trans Voltage Suppressor Diode, 20000W, 100V V(RWM), Unidirectional, 1 Element, Silicon,

获取价格

20KP100A MICROSEMI Trans Voltage Suppressor Diode, 20000W, 100V V(RWM), Unidirectional, 1 Element, Silicon

获取价格

20KP100ACOX.120 MICROSEMI Trans Voltage Suppressor Diode, 20000W, 100V V(RWM), Unidirectional, 1 Element, Silicon,

获取价格

20KP100ACOX.200 MICROSEMI Trans Voltage Suppressor Diode, 20000W, 100V V(RWM), Unidirectional, 1 Element, Silicon,

获取价格