20FL2CZ47A(F)

更新时间： 2024-09-24 13:03:51

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20FL2CZ47A(F) 数据手册

20DL2CZ47A,20FL2CZ47A

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

20DL2CZ47A, 20FL2CZ47A

SWITCHING MODE POWER SUPPLY APPLICATION

Unit: mm

CONVERTER & CHOPPER APPLICATION

z Repetitive Peak Reverse Voltage

: V

= 200 V, 300 V

RRM

z Average Output Rectified Current : I = 20 A

z Ultra Fast Reverse-Recovery Time : t = 35 ns (Max)

z Low Switching Losses and Low Output Noise

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

20DL2CZ47A

20FL2CZ47A

200

300

Repetitive Peak

Reverse Voltage

RRM

Average Output Rectified Current

(Full Sine Waveform)

100 (50H )

Peak One Cycle Surge Forward

Current (Non−Repetitive)

FSM

110 (60H )

JEDEC

―

Junction Temperature

Storage Temperature Range

Screw Torque

−40~150

0.6

°C

JEITA

stg

TOSHIBA

Weight: 2.0g

12−10C1A

―

N·m

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

20DL2CZ47A

20FL2CZ47A

Repetitive Peak Reverse Current

―

0.98

1.3

Peak Forward

Voltage (Note 1)

= 10A

= Rated

RRM

―

μA

RRM

(Note 1)

Reverse Recovery Time

Forward Recovery Time

Thermal Resistance

(Note 1)

= 2.0A, di / dt = −50A / μs

―

100

3.0

= 1.0A

DC Total, Junction to Case

°C / W

th (j−c)

Note 1: A value applied to one cell.

POLARITY

2006-11-08

12 3 4 5

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