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203N PDF预览

203N

更新时间: 2024-09-18 02:55:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 141K
描述
N-Channel 2.5V Specified PowerTrench BGA MOSFET

203N 数据手册

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September 2005  
FDZ203N  
N-Channel 2.5V Specified PowerTrench® BGA MOSFET  
General Description  
Features  
Combining Fairchild’s advanced 2.5V specified  
PowerTrench process with state of the art BGA  
packaging, the FDZ203N minimizes both PCB space  
7.5 A, 20 V.  
RDS(ON) = 18 m@ VGS = 4.5  
DS(ON) = 30 m@ VGS = 2.5 V  
R
and RDS(ON)  
.
This BGA MOSFET embodies a  
Occupies only 4 mm2 of PCB area.  
breakthrough in packaging technology which enables  
the device to combine excellent thermal transfer  
characteristics, high current handling capability, ultra-  
Less than 40% of the area of a SSOT-6  
Ultra-thin package: less than 0.80 mm height when  
mounted to PCB  
low profile packaging, low gate charge, and low RDS(ON)  
.
Applications  
Ultra-low Qg x RDS(ON) figure-of-merit.  
Battery management  
Load switch  
High power and current handling capability.  
Battery protection  
GATE  
D
G
Index  
slot  
Bottom  
S
Top  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
Units  
Drain-Source Voltage  
20  
V
V
A
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±12  
7.5  
20  
1.6  
ID  
(Note 1a)  
(Note 1a)  
PD  
Power Dissipation (Steady State)  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
(Note 1)  
67  
11  
1
RθJA  
RθJB  
RθJC  
°C/W  
Thermal Resistance, Junction-to-Ball  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
203N  
FDZ203N  
7’’  
8mm  
3000 units  
FDZ203N Rev. E6(W)  
©2004 Fairchild Semiconductor Corporation  

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