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200CYL175 PDF预览

200CYL175

更新时间: 2024-11-10 03:55:03
品牌 Logo 应用领域
EDI 二极管高压局域网
页数 文件大小 规格书
2页 46K
描述
HIGH VOLTAGE CYLINDER SILICON RECTIFIERS

200CYL175 技术参数

生命周期:Contact Manufacturer包装说明:O-XELF-X4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.74
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):260 V
JESD-30 代码:O-XELF-X4最大非重复峰值正向电流:20 A
元件数量:1端子数量:4
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:175000 V子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:UNSPECIFIED端子位置:END
Base Number Matches:1

200CYL175 数据手册

 浏览型号200CYL175的Datasheet PDF文件第2页 
CYL  
HIGH VOLTAGE  
CYLINDER SILICON RECTIFIERS  
DIFFUSED SILICON JUNCTIONS  
PRV 150,000 TO 200,000 VOLTS  
AVALANCHE CHARACTERISTICS  
LOW LEAKAGE  
INTERNAL CAPACITOR COMPENSATION  
AVERAGE RECTIFIED  
FORWARD  
MAX FORWARD  
VOLTAGE DROP  
EDI  
PRV  
NUMBER  
VOLTS  
o
CURRENT @50 C  
o
@25 C RATED CURRENT  
150,000  
100CYL150  
100mA  
220 VOL TS  
175,000  
100CYL175  
100mA  
100mA  
200mA  
260 VOL TS  
295 VOL TS  
220 VOL TS  
200,000  
100CYL200  
150,000  
200CYL150  
175,000  
200CYL175  
200mA  
260 VOL TS  
200,000  
200CYL200  
200mA  
295 VOL TS  
=25 C Unless Otherwise Specified)  
ELECTRICAL CHARACTERISTICS(at TA  
o
C, I  
Max. DC Reverse Current @ PRVand 25  
5
A
R
o
100  
C, I  
A
Max. DC Reverse Current @ PRVand 100  
R
o
o
to +125  
C
-55  
C
Ambient Operating Temperature Range,T  
A
o
o
to +125  
C
-55  
Storage Temperature Range, T  
STG  
C
Amps  
20  
Max.One-Half Cycle Surge Current, I  
(Surge )@ 60Hz  
FM  
4
Forward Current Repetitive Peak, I  
Amps  
FRM  
EDI reserves the right to change these specifications at any time whthout notice.  

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