Datasheet > 20-1B06IPB010RC03-P955A65

20-1B06IPB010RC03-P955A65

更新时间： 2023-09-03 20:34:36

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
33页	2069K
描述
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels

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20-1B06IPB010RC03-P955A65

datasheet

flowIPM 1B (CIP)

600 V / 10 A

Topology features

flow 1B 17 mm housing

● Integrated DC capacitor

● Temperature sensor

● Converter+PFC+Inverter

● PFC Shunt

● Gate Drive Circuit including complete Bootstrap Circuit

● Inverter Shunt

● PFC Gate Drive

Component features

● Optimised collector emitter saturation voltage and forward

voltage for low conduction losses

● Reverse conductive IGBT technology

● Smooth switching performance leading to low EMI levels

Housing features

Schematic

● Base isolation: Al₂O₃

● Ceramic substrate for Thick-film based designs

● Convex shaped substrate for superior thermal contact

● Thermo-mechanical push-and-pull force relief

● Solder pin

Target applications

GND

● Embedded Drives

● Industrial Drives

GND

PFC

Vcc

Driver

Vcc

GND

Gate Driver

Types

● 20-1B06IPB010RC03-P955A65

12 Aug. 2022 / Revision 2

12 3 4 5 6 7...33

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