Datasheet > 20-1B06IPB010RC02-L815A49

20-1B06IPB010RC02-L815A49

更新时间： 2024-11-26 11:08:23

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
28页	2589K
描述
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels

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20-1B06IPB010RC02-L815A49 数据手册

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20-1B06IPB010RC02-L815A49

datasheet

flow IPM 1B

600 V / 10 A

Features

flow 1B 17 mm housing

● CIP-topology (converter + inverter + PFC)

● Optimized for PFC frequencies up to 150 kHz *

● Integrated PFC controller circuit with programmable

DC output voltage and PWM frequency

● Inverter gate drive including bootstrap circuit

for high side power supply

● Over current and short circuit protection

● Open emitter or emitter shunts

● Temperature sensor

Schematic

Target Applications

● Embedded Drives

● Industrial Drives

Types

● 20-1B06IPB010RC02-L815A49

● 20-1B06IPB010RC02-L815A49-/3/

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Diode

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

I_FSM

1600

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

T_j= T_jmax

Surge (non-repetitive) forward current

I²t-value

130

t_p= 10 ms

50 Hz half sine wave

I²t

A²s

°C

P_tot

T_j= T_jmax

Power dissipation

T_jmax

Maximum Junction Temperature

150

18 Sept. 2020 / Revision 5

12 3 4 5 6 7...28

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