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20-1B06IPB010RC01-P955A45

更新时间： 2024-11-26 11:12:59
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
30页 1001K
描述
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels

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20-1B06IPB010RC01-P955A45 数据手册

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20-PB06IPB010RC01-P955A45Y  
20-1B06IPB010RC01-P955A45  
datasheet  
flow IPM 1B  
600 V / 10 A  
Features  
flow IPM 1B  
● CIPꢀtopology (converter + inverter + PFC)  
● Optimized for PFC frequencies of 20kHz..100kHz  
and inverter frequencies of 4kHz..20kHz  
● Integrated PFC gate drive  
● PFC shunt  
● Inverter gate drive inclusive bootstrap for  
high side power supply  
Solder pins  
● Over current and short circuit protection  
● Integrated DCꢀcapacitor  
● Sense output of DCꢀcurrent  
● Temperature sensor  
● Conclusive power flow, all power connections  
on one side, no input output Xꢀing  
● Optional preꢀapplied thermal interface material  
Pressꢀfit  
Schematic  
Target Applications  
● Low Power Industrial Drives  
● Motor Integrated Fans and Pumps  
● AirCon  
● Electrical Tools  
Types  
● 20ꢀ1B06IPB010RC01ꢀP955A45  
● 20ꢀPB06IPB010RC01ꢀP955A45Y  
Maximum Ratings  
T j=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Input Rectifier Diode  
Repetitive peak reverse voltage  
DC forward current  
V RRM  
I FAV  
1600  
V
A
A
T s = 80 °C  
T c = 80 °C  
13  
14  
T j = T jmax  
t p = 10 ms  
T j = T jmax  
I FSM  
Surge (nonꢀrepetitive) forward current  
130  
80  
I 2  
t
I2tꢀvalue  
A2s  
W
T s = 80 °C  
T c = 80 °C  
15  
23  
P tot  
Power dissipation  
T jmax  
Maximum Junction Temperature  
150  
°C  
PFC IGBT  
V CE  
I C  
Collectorꢀemitter breakdown voltage  
DC collector current  
650  
V
A
T s = 80 °C  
T c = 80 °C  
12  
14  
T j = T jmax  
I CRM  
t p limited by T jmax  
V CE ≤ 650V, T j ≤ T op max  
T j = T jmax  
Repetitive peak collector current  
Turn off safe operating area  
Power dissipation  
90  
90  
A
A
T s = 80 °C  
T c = 80 °C  
19  
29  
P tot  
V GE  
W
V
Gateꢀemitter peak voltage  
Maximum Junction Temperature  
±20  
175  
T jmax  
°C  
copyright Vincotech  
1
31 Jan. 2017 / Revision 6  
1234567...30

中文翻译

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