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20-1B06IPB010RC-P955A4 PDF预览

20-1B06IPB010RC-P955A4

更新时间: 2024-11-22 11:08:15
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
31页 2547K
描述
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels

20-1B06IPB010RC-P955A4 数据手册

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20-PB06IPB010RC-P955A40Y  
20-1B06IPB010RC-P955A40  
datasheet  
flow IPM 1B  
600 V / 10 A  
Features  
flow IPM 1B  
● CIP-topology (converter + inverter + PFC)  
● Optimized for PFC frequencies of 20kHz..100kHz  
and inverter frequencies of 4kHz..20kHz  
● Integrated PFC controller circuit with programmable  
DC output voltage and PWM frequency  
● Inverter gate drive inclusive bootstrap for high side  
power supply  
Solder pins  
● Over current and short circuit protection  
● Integrated DC-capacitor  
● Sense output of DC-current  
Temperature sensor  
● Conclusive power flow, all power connections on  
one side, no input output X-ing  
Press-fit  
● Optional pre-applied thermal interface material  
Schematic  
Target Applications  
● Fans and Pumps  
● AirCon  
● Electrical Tools  
● Low power industrial drive  
Types  
● 20-1B06IPB010RC-P955A40  
● 20-PB06IPB010RC-P955A40Y  
Maximum Ratings  
T j=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Input Rectifier Diode  
Repetitive peak reverse voltage  
DC forward current  
V RRM  
I FAV  
1600  
V
A
A
T s = 80 °C  
T c = 80 °C  
13  
14  
T j = T jmax  
I FSM  
Surge (non-repetitive) forward current  
I 2t-value  
130  
80  
t p = 10 ms  
50 Hz half sine wave  
T j = 150 °C  
I 2t  
A2s  
W
T s = 80 °C  
T c = 80 °C  
15  
23  
P tot  
T j = T jmax  
Power dissipation  
T jmax  
Maximum Junction Temperature  
150  
°C  
PFC IGBT  
V CE  
I C  
Collector-emitter breakdown voltage  
DC collector current  
650  
V
A
T s = 80 °C  
T c = 80 °C  
12  
14  
T j = T jmax  
I CRM  
t p limited by T jmax  
V CE ≤ 650 V, T j T op max  
T j = T jmax  
Repetitive peak collector current  
Turn off safe operating area  
Power dissipation  
90  
90  
A
A
T s = 80 °C  
T c = 80 °C  
19  
29  
P tot  
V GE  
W
V
Gate-emitter peak voltage  
Maximum Junction Temperature  
±20  
175  
T jmax  
°C  
copyright Vincotech  
1
08 Apr. 2017 / Revision 8  

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