5秒后页面跳转
1ZB9.1 PDF预览

1ZB9.1

更新时间: 2024-01-28 04:32:33
品牌 Logo 应用领域
鲁光 - LGE 二极管齐纳二极管
页数 文件大小 规格书
3页 231K
描述
Zener Diodes

1ZB9.1 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
Is Samacsys:N配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:30 Ω
元件数量:1最高工作温度:150 °C
最大功率耗散:1 W标称参考电压:9.1 V
子类别:Voltage Reference Diodes表面贴装:NO
最大电压容差:5%工作测试电流:10 mA
Base Number Matches:1

1ZB9.1 数据手册

 浏览型号1ZB9.1的Datasheet PDF文件第2页浏览型号1ZB9.1的Datasheet PDF文件第3页 
1ZB6.8-1ZB390  
Zener Diodes  
POWER DISSIPATION: 1.0 W  
DO - 41  
Features  
Silicon planar power zener diodes  
For use in stabilizing and clipping curcuits with high  
power rating.  
Standard zener voltage tolerance is ±10%. Add  
suffix "A" for ±5% tolerance. Other zener voltage  
and tolerances are available upon request.  
Mechanical Data  
Case:DO-41  
Terminals: Solderable per MIL-STD-202, method 208  
Polarity: Cathode band  
Marking: Type number  
Dimensions in millimeters  
Approx. Weight: 0.34grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
VALUE  
UNIT  
W
Zener current (see Table "Characteristics")  
Pow er dissipation at Tamb=25  
Junction temperature  
1.01)  
Ptot  
TJ  
-40---+150  
-40---+150  
Storage temperature range  
Ts  
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
http://www.luguang.cn  
mail:lge@luguang.cn  

与1ZB9.1相关器件

型号 品牌 描述 获取价格 数据表
1ZB9.1TPA3 TOSHIBA DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

获取价格

1ZB91 LGE Zener Diodes

获取价格

1ZC100 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE

获取价格

1ZC100A TOSHIBA DIODE (CONSTANT VOLTAGE REGULATION)

获取价格

1ZC100ATPA3 TOSHIBA DIODE 100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

获取价格

1ZC100ATPB5 TOSHIBA DIODE 100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

获取价格