Datasheet > 1SV278B(TPH3,F)

1SV278B(TPH3,F)

更新时间： 2024-11-12 14:31:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	152K
描述
1SV278B(TPH3,F)

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技术参数
数据手册

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1SV278B(TPH3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	Base Number Matches：	1

1SV278B(TPH3,F) 数据手册

1SV278B

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV278B

TV Tuning

Unit: mm

•

High capacitance ratio: C /C

= 6.5 (typ.)

2 V 25 V

Low series resistance: r = 0.4 Ω (typ.)

Excellent C-V characteristics, and small tracking error.

Suitable for small tuners

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

Peak reverse voltage

Junction temperature

Storage temperature range

35 (R = 10 kΩ)

125

°C

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

1-1G1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 0.0014 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 28 V

⎯

= 2 V, f = 1 MHz

= 25 V, f = 1 MHz

⎯

14.16

2.01

5.90

⎯

16.25

2.43

7.28

0.58

2 V

Capacitance

⎯

25 V

Capacitance ratio

Series resistance

6.50

0.4

2 V 25 V

= 5 V, f = 470 MHz

Note 1: Available in matched group for capacitance to 2.%.

C (max) − C (min)

0.02

C (min)

(V = 2~25 V)

Marking

2007-11-01

12 3

中文翻译

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