Datasheet > 1SV252_07

1SV252_07

更新时间： 2024-11-19 02:55:07

品牌	Logo	应用领域
东芝 - TOSHIBA		射频衰减器
页数	文件大小	规格书
3页	198K
描述
VHF~UHF Band RF Attenuator Applications

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中文翻译

获取价格

数据手册

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1SV252_07 数据手册

1SV252

TOSHIBA Diode Silicon Epitaxial Pin Type

1SV252

VHF~UHF Band RF Attenuator Applications

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

Forward current

°C

Junction temperature

Storage temperature range

125

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

―

SC-70

TOSHIBA

1-2P1C

Weight: 0.006 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 10 μA

⎯

0.1

0.98

0.4

μA

Reverse current

Forward voltage

Total capacitance

Series resistance

V = 50 V

= 50 mA

0.93

0.2

3.5

(Note)

= 50 V, f = 1 MHz

I = 10 mA, f = 100 MHz

Note: C is measured by 3 terminal method with capacitance bridge.

Marking

2007-11-01

12 3

中文翻译

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