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1SV172TE85L PDF预览

1SV172TE85L

更新时间: 2024-02-27 15:27:12
品牌 Logo 应用领域
东芝 - TOSHIBA 衰减器测试光电二极管
页数 文件大小 规格书
3页 127K
描述
DIODE 50 V, SILICON, PIN DIODE, PIN Diode

1SV172TE85L 技术参数

是否Rohs认证: 不符合生命周期:Lifetime Buy
包装说明:R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.78应用:ATTENUATOR
最小击穿电压:50 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
标称二极管电容:0.25 pF二极管元件材料:SILICON
二极管类型:PIN DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
反向测试电压:50 V子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

1SV172TE85L 数据手册

 浏览型号1SV172TE85L的Datasheet PDF文件第2页浏览型号1SV172TE85L的Datasheet PDF文件第3页 
1SV172  
TOSHIBA Diode Silicon Epitaxial Pin Type  
1SV172  
VHF~UHF Band RF Attenuator Applications  
Unit: mm  
Useful for small size tuner  
Small total capacitance: C = 0.25 pF (typ.)  
T
Low series resistance: r = 3 (typ.)  
s
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
R
Forward current  
I
mA  
°C  
°C  
F
Junction temperature  
Storage temperature range  
T
j
125  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
SC-59  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-3G1G  
Weight: 0.013 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 10 μA  
R
50  
0.1  
V
μA  
V
R
Reverse current  
Forward voltage  
Total capacitance  
Series resistance  
I
V = 50 V  
R
R
V
F
C
T
I
= 50 mA  
F
0.95  
0.25  
3
(Note)  
V
= 50 V, f = 1 MHz  
pF  
Ω
R
r
s
I
= 10 mA, f = 100 MHz  
F
Note: C is measured by 3 terminal method with capacitance bridge.  
T
Marking  
1
2007-11-01  

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