Datasheet > 1SS83

1SS83

更新时间： 2023-12-06 20:11:34

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	526K
描述
Switching Diodes Switch detector

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1SS83 数据手册

1SS83

SILICON EPITAXIAL PLANAR DIODES

DO-35(GLASS)

Features

High reverse voltage. (V_R= 250 V)

1.0 2(26.0)

MIN.

High reliability with glass seal.

0.079(2.0)

MAX

Mechanical Data

0.165 (4.2)

MAX

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Characteristic

Symbol

Value

300

250

200

625

Unit

Peak reverse voltage

Reverse voltage

Average rectified current

Peak forward current

V_RM

V_R

I_O

I_FM

Non-Repetitive peak forward surge current I_FSM

Power dissipation

Junction temperature

Storage temperature

Tstg

400

175

−65 to +175

°C

Characteristic

Symbol

Min

—

Typ

—

1.5

—

Max

200

100

1.0

—

100

Unit

µA

Test Condition

Reverse current

I_R1

I_R2

V_F

V_R= 250 V

V_R= 300 V

I_F= 100 mA

V_R= 0 V, f = 1 MHz

I_F= I_R= 30 mA, Irr = 3 mA, R_L= 100 Ω

Forward voltage

Capacitance

Reverse recovery time

t_rr

—

Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.

2. Within 1s forward surge current.

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