Datasheet > 1SS83

1SS83

更新时间： 2024-09-30 06:18:19

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
1页	117K
描述
SILICON EPITAXIAL PLANAR DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS83 数据手册

1SS83

SILICON EPITAXIAL PLANAR DIODE

High Voltage Switching Diode

Max. 0.5

Features

Min. 27.5

Max. 3.9

Min. 27.5

Max. 1.9

• High reverse voltage (V_R= 250 V)

• High reliability with glass seal

Black

Cathode Band

Black

Part No.

Black

"ST" Brand

XXX

Glass Case DO-35

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

V_R

Value

300

250

200

625

Unit

Peak Reverse Voltage

Reverse Voltage

Average Forward Current

Peak Forward Current

I_O

I_FM

Non-Repetitive Peak Forward Surge Current (at t = 1 s)

Power Dissipation

I_FSM

P_tot

T_J

400

175

Junction Temperature

Storage Temperature Range

T_stg

- 65 to + 175

Electrical Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 100 mA

V_F

Reverse Current

at V_R= 250 V

at V_R= 300 V

I_R

0.2

µA

100

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

1.5

Reverse Recovery Time

at I_F= I_R= 30 mA, I_rr= 3 mA, R_L= 100 Ω

100

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 20/06/2007

中文翻译

下载PDF

与1SS83相关器件

型号	品牌	获取价格	描述	数据表
1SS83-E	RENESAS	获取价格	暂无描述
1SS83RG	RENESAS	获取价格	0.2A, SILICON, SIGNAL DIODE, DO-35
1SS83RH	RENESAS	获取价格	0.2A, SILICON, SIGNAL DIODE, DO-35
1SS83TA	HITACHI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
1SS83TA	RENESAS	获取价格	暂无描述
1SS83TA-E	RENESAS	获取价格	0.2A, SILICON, SIGNAL DIODE, DO-35
1SS83TD	HITACHI	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
1SS83TD	RENESAS	获取价格	0.2A, SILICON, SIGNAL DIODE, DO-35
1SS83TD-E	RENESAS	获取价格	暂无描述
1SS83TE	HITACHI	获取价格	暂无描述