Datasheet > 1SS400GT2R

1SS400GT2R

更新时间： 2024-09-24 12:26:31

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管开关
页数	文件大小	规格书
5页	505K
描述
Switching Diode

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中文翻译

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1SS400GT2R 数据手册

Data Sheet

Switching Diode

1SS400G

Applications

Dimensions (Unit : mm)

Land size figure (Unit : mm)

High speed switching

0.13±0.03

0.5

0.6±0.05

Features

1)Ultra small mold type.（VMD2）

2)High reliability

VMD2

Construction

Silicon epitaxial planer

Structure

0.27±0.03

0.5±0.05

ROHM : VMD2

dot (year week factory)

Taping dimensions (Unit : mm)

0.18±0.05

φ1.5+0.1

ꢀꢀꢀꢀꢀ0

2±0.05

4±0.1

φ0.5

0.3

0.65±0.05

4±0.1

2±0.05

0.76±0.1

Absolute maximum ratings (Ta=25C)

Parameter

Limits

Symbol

V_RM

V^R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Forward current (repetitive peak)

Average rectified forward current

Surge current (1S)

225

I^FM

C

100

500

Isurge

Junction temperature

150

Storage temperature

55 to 150

Tstg

Electrical characteristics (Ta=25C)

Parameter

Symbol

V_F

Min.

Typ.

Max.

1.2

Unit

Conditions

I_F=100mA

V_R=80V

Forward voltage

Reverse current

I_R

100

3.0

Capacitance between terminal

Reverse recovery time

V_R=0.5V f=1.0MHz

C^t

VR=6V IF=10mA R_L＝100Ω

Trr

4.0

www.rohm.com

2011.10 - Rev.A

1/4

12 3 4 5

中文翻译

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