Datasheet > 1SS357

1SS357

更新时间： 2023-12-06 20:09:11

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	280K
描述
肖特基二极管

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1SS357 数据手册

1SS357

Silicon Epitaxial Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Low forward voltage

• Low reverse current

Anode

Applications

Top View

Simplified outline SOD-323 and symbol

• High Speed Switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

V_R

Value

Unit

Maximum (Peak) Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

Maximum (Peak) Forward Current

Surge Forward Current (10 ms)

Power Dissipation

I_F(AV)

I_FM

100

300

I_FSM

P_tot

200

℃

Junction Temperature

T_j

125

Storage Temperature Range

T_stg

- 55 to + 125

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 150 μA

Forward Voltage

at I_F= 100 mA

V_F

I_R

0.6

Reverse Current

at V_R= 40 V

µA

Total Capacitance

at V_R= 0, f = 1 MHz

C_T

1 / 3

Dated: 01/04/2022 Rev: 02

12 3

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