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1SS355_0711 PDF预览

1SS355_0711

更新时间: 2024-10-30 07:23:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管
页数 文件大小 规格书
3页 188K
描述
Silicon Epitaxial Planar Diode

1SS355_0711 数据手册

 浏览型号1SS355_0711的Datasheet PDF文件第2页浏览型号1SS355_0711的Datasheet PDF文件第3页 
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Diode  
1SS355  
FEATURES  
Pb  
z
Small Surface Mounting Type:  
Lead-free  
SOD-323  
z
z
High Speed :t=1.2ns Typ.  
High Reliability With High Surge Current Handing  
Capability.  
APPLICATIONS  
SOD-323  
z
High speed switching  
ORDERING INFORMATION  
Type No.  
1SS355  
Marking  
A
Package Code  
SOD-323  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Parameter  
Symbol  
VRM  
VR  
Limits  
90  
Unit  
V
Non-Repetitive Peak reverse voltage  
DC Reverse Voltage  
Peak forward Current  
Average Rectified Output Current  
Surge current (1s)  
80  
V
IFM  
225  
100  
500  
200  
125  
mA  
mA  
mA  
mW  
IO  
Isurge  
PD  
Power Dissipation  
Junction temperature  
Storage temperature  
Tj  
TSTG  
-55~+125  
Document number: BL/SSSDB001  
Rev.A  
www.galaxycn.com  
1

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