Datasheet > 1SS355

1SS355

更新时间： 2024-05-23 22:23:45

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
5页	375K
描述
SOD-323

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中文翻译

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数据手册

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1SS355 数据手册

TAK CHEONG

^®

SEMICONDUCTOR

200mW SOD-323 SURFACE MOUNT

Small Outline Flat Lead Plastic Package

High Speed Switching Diode

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

200

-65 to +150

+150

°C

Storage Temperature Range

Operating Junction Temperature

Reverse Voltage

V_R

V_RM

I_FM

Repetitive Peak Reverse Voltage

Forward Current

250

I_O

Continuous Forward Current

Repetitive Peak Forward Current

150

I_FRM

500

Peak Forward Surge Current

(Pulse Width=1us)

I_FSM

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

High Speed Switching Device (T_RR<4.0 nS)

General Purpose Diodes

RoHS Compliant

DEVICE MARKING CODE:

Device

Device Type

1SS355

Marking

Green EMC

Matte Tin(Sn) Lead Finish

Band Indicates Cathode

Weight: approx. 0.004g

AEC-Q101 Qualified

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Symbol

Parameter

Test Condition

I_R=100µA

Unit

Min

Max

B_V

I_R

Breakdown Voltage

Volts

Reverse Leakage Current

Forward Voltage

V_R=80V

100

1.2

V_F

T_RR

I_F=100mA

I_F=10mA

Volts

Reverse Recovery Time

V_R=6V

R_L=100

V_R=0.5V, f=1M_HZ

Capacitance

Number: DB-010

April 2019, Revision G

Page 1

12 3 4 5

中文翻译

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