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1SS352TPH3 PDF预览

1SS352TPH3

更新时间: 2024-02-04 14:58:58
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关测试光电二极管快速恢复二极管
页数 文件大小 规格书
3页 214K
描述
Ultra High Speed Switching Application

1SS352TPH3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PDSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.71
Is Samacsys:N应用:FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-G2最大非重复峰值正向电流:1 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
认证状态:Not Qualified参考标准:AEC-Q101
最大重复峰值反向电压:85 V最大反向电流:0.5 µA
最大反向恢复时间:0.004 µs反向测试电压:80 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1SS352TPH3 数据手册

 浏览型号1SS352TPH3的Datasheet PDF文件第2页浏览型号1SS352TPH3的Datasheet PDF文件第3页 
1SS352  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS352  
Ultra High Speed Switching Application  
Unit: mm  
z Small package  
z Low forward voltage  
: V  
= 0.98V (typ.)  
F (3)  
z Fast reverse recovery time: t = 1.6ns (typ.)  
rr  
z Small total capacitance  
: C = 0.5pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
200  
mA  
mA  
A
FM  
I
100  
O
I
1
FSM  
P
200 (*)  
125  
mW  
°C  
°C  
Junction temperature  
T
j
JEDEC  
Storage temperature  
T
55~125  
stg  
JEITA  
1-1E1A  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.004g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(*) Mounted on a glass epoxy circuit board of 20 × 20mm,  
pad dimension of 4 × 4mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.62  
0.75  
0.98  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
3.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0, f = 1MH  
0.5  
1.6  
pF  
ns  
z
Reverse recovery time  
t
I = 10mA, Fig.1  
F
rr  
1
2007-11-01  

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