Datasheet > 1SS322TE85R

1SS322TE85R

更新时间： 2024-02-12 18:17:44

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
3页	176K
描述
DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode

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技术参数
数据手册

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1SS322TE85R 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.72	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.6 V	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
最高工作温度：	125 °C	最大输出电流：	0.1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	最大功率耗散：	0.1 W
认证状态：	Not Qualified	最大反向电流：	5 µA
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

1SS322TE85R 数据手册

1SS322

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS322

Unit: mm

Low Voltage High Speed Switching

z Low forward voltage

z Low reverse current

z Small package

: V

= 0.54V (typ.)

F (3)

: I = 5μA (max)

: SC−70

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Power dissipation

300

°C

100

Junction temperature

125

JEDEC

―

Storage temperature

stg

−55∼125

°C

JEITA

SC−70

1−2P1D

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.006g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

0.28

0.36

0.54

―

F (1)

Forward voltage

= 10mA

―

F (2)

= 100mA

0.60

―

F (3)

Reverse current

= 40V

―

μA

Total capacitance

= 0, f = 1MHz

―

Marking

2007-11-01

12 3

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