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1SS226 PDF预览

1SS226

更新时间: 2023-12-06 20:04:00
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1643K
描述
SOT-23

1SS226 数据手册

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GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Diodes  
1SS226  
SWITCHING DIODE  
SOT-23  
FEATURES  
z
z
z
Low forward voltage  
Fast reverse recovery time  
Small total capacitance  
1
2
MARKING: C3  
3
C3  
C3 = Device code  
Solid dot = Green molding compound device.  
Maximum Ratings ,Single Diode @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
85  
Non-Repetitive Peak Reverse Voltage  
VRM  
V
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
80  
V
300  
100  
Forward Continuous Current  
IFM  
mA  
Average Rectified Output Current  
IO  
mA  
A
Non-Repetitive Peak  
Forward Surge Current @t=8.3ms  
IFSM  
PD  
2
Power Dissipation  
150  
833  
mW  
/W  
Thermal Resistance from Junction to Ambient  
RθJA  
TJ,TSTG  
Operation Junction and Storage Temperature Range  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
IR= 100uA  
Min  
Max  
Unit  
Reverse breakdown voltage  
Reverse voltage leakage current  
Forward voltage  
80  
V
uA  
V
VR=80V  
0.5  
1.2  
VF  
IF=100mA  
Diode capacitance  
CD  
trr  
VR=0V, f=1MHz  
IF=10mA  
3
4
pF  
ns  
Reverse recovery time  
www.jscj-elec.com  
1
Rev. - 2.1  

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