1SS184
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
Ultra High-Speed Switching Applications
Unit: mm
z Small package: SC-59
z Low forward voltage: V
= 0.9 V (typ.)
F (3)
z Fast reverse recovery time: t = 1.6 ns (typ.)
rr
z Small total capacitance: C = 0.9 pF (typ.)
T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
V
85
80
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
I
300*
100*
2*
mA
mA
A
FM
I
O
I
FSM
P
150
mW
°C
°C
Junction temperature
T
j
125
Storage temperature
T
−55 to 125
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
JEDEC
JEITA
TO-236MOD
SC-59
1-3G1F
TOSHIBA
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristics
Symbol
Test Condition
= 1 mA
Min
Typ.
Max
Unit
V
V
I
I
I
0.60
0.72
0.90
―
―
―
―
―
F (1)
F
F
F
Forward voltage
V
= 10 mA
―
1.20
0.1
0.5
3.0
4.0
F (2)
V
= 100 mA
= 30 V
―
―
―
―
―
―
―
―
―
―
F (3)
I
V
V
V
I
―
―
R (1)
R
Reverse current
μA
I
= 80 V
R (2)
R
R
Total capacitance
C
T
= 0, f = 1 MHz
0.9
1.6
pF
ns
Reverse recovery time
t
= 10 mA (Fig.1)
rr
F
Marking
Start of commercial production
1982-03
1
2014-03-01