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1SMB5926B PDF预览

1SMB5926B

更新时间: 2024-11-29 06:18:27
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
3页 103K
描述
SILICON ZENER DIODES

1SMB5926B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.6
Is Samacsys:N配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:5.5 Ω
JESD-609代码:e3元件数量:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:1.5 W标称参考电压:11 V
子类别:Voltage Reference Diodes表面贴装:YES
端子面层:Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:34.1 mA
Base Number Matches:1

1SMB5926B 数据手册

 浏览型号1SMB5926B的Datasheet PDF文件第2页浏览型号1SMB5926B的Datasheet PDF文件第3页 
TH97/2478  
TH09/2479  
IATF 0060636  
SGS TH07/1033  
SILICON ZENER DIODES  
1SMB5913B - 1SMB5956B  
SMB (DO-214AA)  
VZ : 3.3 - 200 Volts  
PD : 3.0 Watts  
1.1  
± 0.3  
FEATURES :  
* Complete Voltage Range 3.3 to 200 Volts  
* High peak reverse power dissipation  
* Flat handling surface for accurate placement  
* Low leakage current  
0.2  
0.22  
± 0.07  
2.0  
±
0.1  
0.15  
2.3  
±
3.6  
±
* Pb / RoHS Free  
MECHANICAL DATA  
* Case : SMB (DO-214AA) Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Maximum Lead Temperature for Soldering Purposes :  
260 °C for 10 Seconds  
Dimensions in millimeter  
* Leads : Modified L-Bend providing more contact area to bond pads.  
* Polarity : Cathode indicated by polarity band.  
* Mounting position : Any  
* Weight : 0.093 gram  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Maximum Steady State Power Dissipation at TL = 75°C,  
Measured at Zero Lead Length  
PD  
3.0  
W
40  
25  
Derate Above 75 °C  
mW/°C  
°C/W  
mW  
Thermal Resistance From Junction to Lead  
Maximum Steady State Power Dissipation at Ta = 25 °C  
Measured at Zero Lead Length  
Rθ  
JL  
PD  
550  
4.4  
226  
Derate Above 25 °C  
mW/°C  
°C/W  
Volts  
°C  
Thermal Resistance From Junction to Ambient  
Maximum Forward Voltage at IF = 200 mA  
Junction Temperature Range  
RθJA  
VF  
1.5  
TJ  
- 65 to + 150  
- 65 to + 150  
Storage Temperature Range  
Tstg  
°C  
Page 1 of 3  
Rev. 06 : December 23, 2009  

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