5秒后页面跳转
1SMB3EZ10-AU PDF预览

1SMB3EZ10-AU

更新时间: 2024-02-27 05:35:08
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管
页数 文件大小 规格书
6页 319K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

1SMB3EZ10-AU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.24
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:4 Ω
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:3 W
认证状态:Not Qualified标称参考电压:10 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:75 mA
Base Number Matches:1

1SMB3EZ10-AU 数据手册

 浏览型号1SMB3EZ10-AU的Datasheet PDF文件第2页浏览型号1SMB3EZ10-AU的Datasheet PDF文件第3页浏览型号1SMB3EZ10-AU的Datasheet PDF文件第4页浏览型号1SMB3EZ10-AU的Datasheet PDF文件第5页浏览型号1SMB3EZ10-AU的Datasheet PDF文件第6页 
1SMB3EZ4.7-AU SERIES  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES  
POWER  
VOLTAGE  
4.7 to 51 Volts  
3.0 Watts  
FEATURES  
• Low profile package  
• Built-in strain relief  
• Glass passivated junction  
• Low inductance  
• Plastic package has Underwriters Laboratory Flammability  
Classification 94V-O  
0.185(4.70)  
0.160(4.06)  
• High temperature soldering : 260°C /10 seconds at terminals  
• Acqire quality system certificate : TS16949  
• AEC-Q101 qualified  
0.012(0.305)  
0.006(0.152)  
• Lead free in comply with EU RoHS 2002/95/EC directives  
0.050(1.27)  
0.030(0.76)  
MECHANICAL DATA  
0.220(5.59)  
0.200(5.08)  
• Case: JEDEC DO-214AA, Molded plastic over passivated junction  
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity : Color band denotes cathode end  
• Standard packing: 12mm tape (E1A-481)  
• Weight: 0.0032 ounce, 0.092 gram  
1
2
Cathode  
Anode  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
3.0  
Units  
Steady State Power Dissipation at TL=75 OC (Note 1)  
W atts  
P
D
Peak Forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC method)  
15  
Amps  
OC  
I
FSM  
Operating Junction and Storage Temperature Range  
-55 to + 150  
TJ,TSTG  
NOTE :  
1. Mounted on infinite heatsink.  
PAGE . 1  
January 02,2012-REV.08  

与1SMB3EZ10-AU相关器件

型号 品牌 获取价格 描述 数据表
1SMB3EZ11 PANJIT

获取价格

SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts)
1SMB3EZ11 TRSYS

获取价格

SURFACE MOUNT SILICON ZENER DIODE
1SMB3EZ11 SUNMATE

获取价格

3W patch zener diode SMB 11V series
1SMB3EZ110 SUNMATE

获取价格

3W patch zener diode SMB 110V series
1SMB3EZ110 PANJIT

获取价格

SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts)
1SMB3EZ110 TRSYS

获取价格

SURFACE MOUNT SILICON ZENER DIODE
1SMB3EZ11-AU PANJIT

获取价格

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
1SMB3EZ12 TRSYS

获取价格

SURFACE MOUNT SILICON ZENER DIODE
1SMB3EZ12 SUNMATE

获取价格

3W patch zener diode SMB 12V series
1SMB3EZ12 PANJIT

获取价格

SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts)