Datasheet > 1SMB2EZ100

1SMB2EZ100

更新时间： 2024-11-27 22:27:07

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管测试
页数	文件大小	规格书
5页	129K
描述
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)

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中文翻译

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技术参数
数据手册

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1SMB2EZ100 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	配置：	SINGLE
二极管类型：	ZENER DIODE	最大动态阻抗：	175 Ω
元件数量：	1	最高工作温度：	150 °C
最大功率耗散：	2 W	标称参考电压：	100 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
最大电压容差：	5%	工作测试电流：	5 mA
Base Number Matches：	1

1SMB2EZ100 数据手册

1SMB2EZ11 THRU 1SMB2EZ200

SURFACE MOUNT SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts

Power - 2.0 Watts

FEATURES

DO-214AA

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Excellent clamping capability

£g

Typical I_Dless than 1 A above 11V

High temperature soldering :

¢J

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-214AA, Molded plastic over

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, method 2026

Polarity: Color band denotes positive end (cathode)

except Brdirectional

Standard Packaging: 12mm tape (EIA-481)

Weight: 0.003 ounce, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

¢J

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_D

VALUE

UNITS

Watts

Peak Pulse Power Dissipation (Note A)

¢J

Derate above 75

mW/

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated

load(JEDEC Method) (Note B)

I_FSM

Amps

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

¢J

NOTES:

A. Mounted on 5.0mm²(.013mm thick) land areas.

B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses

per minute maximum.

12 3 4 5

中文翻译

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