1SA0-BP

更新时间： 2024-02-17 17:53:20

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	88K
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数据手册

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1SA0-BP 数据手册

M C C

1S20

THRU

1SA0

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Plastic package has Underwriters Laboratory Flammability

1.0 Amp Schottky

Barrier Rectifier

20 to 100 Volts

Classification 94V-0

Low power loss, high efficiency

High current capability, Low forward voltage drop

High surge capability

Metal silicon junction, majority carrier conduction

Maximum Ratings

R-1

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance: 50^oC/W Junction to Lead

Maximum

RMS

Voltage

Maximum DC

MCC

Recurrent

Peak Reverse

Voltage

Blocking

Voltage

Part Number

1S20

1S30

1S40

1S50

1S60

1S80

1SA0

20V

14V

21V

28V

35V

42V

56V

70V

20V

30V

40V

50V

60V

80V

100V

30V

40V

50V

60V

80V

100V

Cathode Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I_F(AV)

1.0 A

T = 75°C

Current

Peak Forward Surge

Current

I_FSM

35A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

1S20-1S40

1S50-1S60

1S80-1SA0

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

_FM= 1.0A;

V_F

0.55V

0.70V

0.85V

T = 25°C

DIMENSIONS

INCHES

DIM

NOTE

MIN

MAX

0.140

0.102

0.024

-----

MIN

2.90

2.30

0.50

20.00

MAX

3.50

2.60

0.60

-----

0.116

0.091

0.020

0.787

I_R

0.5mA

10mA

T = 25°C

T = 100°C

Measured at

1.0MHz, V_R=4.0V

C_J

110pF

Pulse Test: Pulse width 300 usec, Duty cycle 1%.

www.mccsemi.com

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