Datasheet > 1S80-B

1S80-B

更新时间： 2024-10-31 10:16:11

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
4页	333K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1S80-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1S80-B 数据手册

M C C

1S20

THRU

1SA0

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Micro Commercial Components

Features

Case Material: Molded Plastic. UL Flammability

1.0 Amp Schottky

Barrier Rectifier

20 to 100 Volts

Classification Rating 94V-0

Low power loss, high efficiency

High current capability, Low forward voltage drop

High surge capability

Marking : Cathode band and type number

Maximum Ratings

R-1

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +125°C

Maximum Thermal Resistance: 50^oC/W Junction to Lead

Maximum

RMS

Voltage

Maximum DC

MCC

Recurrent

Peak Reverse

Voltage

Blocking

Voltage

Part Number

1S20

1S30

1S40

1S50

1S60

1S80

1SA0

20V

14V

21V

28V

35V

42V

56V

70V

20V

30V

40V

50V

60V

80V

100V

30V

40V

50V

60V

80V

100V

Cathode Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I_F(AV)

1.0 A

T = 75°C

Current

Peak Forward Surge

Current

I_FSM

35A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

1S20-1S40

1S50-1S60

1S80-1SA0

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

_FM= 1.0A;

V_F

0.55V

0.70V

0.85V

T = 25°C

DIMENSIONS

INCHES

DIM

NOTE

MIN

MAX

0.140

0.102

0.024

-----

MIN

2.90

2.30

0.50

20.00

MAX

3.50

2.60

0.60

-----

0.116

0.091

0.020

0.787

I_R

0.5mA

10mA

T = 25°C

T = 100°C

Measured at

1.0MHz, V_R=4.0V

C_J

110pF

Pulse Test: Pulse width 300 usec, Duty cycle 1%.

www.mccsemi.com

Revision: 4

2006/05/28

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