Datasheet > 1S2076A

1S2076A

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	90K
描述
Switching Diodes

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中文翻译

获取价格

技术参数
数据手册

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1S2076A 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1S2076A 数据手册

www.eicsemi.com

HIGH SPEED SWITCHING DIODE

DO - 35

1S2076A

PRV : 70 Volts

Io : 150 mA

FEATURES :

1.00 (25.4)

* Silicon Epitaxial Planar Diode

0.079(2.0 )max.

min.

* High reliability

* Low reverse current

* Low forward voltage drop

* High speed switching

* Pb / RoHS Free

0.150 (3.8)

max.

1.00 (25.4)

0.020 (0.52)max.

min.

MECHANICAL DATA :

* Case : DO-35 Glass Case

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.13 gram (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

VALUE

UNIT

VRRM

Maximum Repetitive Peak Reverse Voltage

Maximum Reverse Voltage

IF(AV)

IFSM

Maximum Average Forward Current

150

1.0

Maximum Non-Repetitive Peak Forward Current (t < 1s)

Maximum Power Dissipation , Ta = 25 °C

Maximum Forward Voltage at IF = 10 mA

250

0.8

at VR = 30V

Maximum Reverse Current

100

Maximum Reverse Recovery Time

Trr

4.0

3.0

(IF = 10mA, VR = 6V , RL = 50W)

Maximum Capacitance Between Lead

(VR = 1 V, f = 1MHz)

Junction Temperature Range

175

°C

TSTG

Storage Temperature Range

- 65 to + 175

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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1S2076ARG	HITACHI	获取价格	Mixer Diode, Silicon, DO-35, DO-35, 2 PIN
1S2076ATA	RENESAS	获取价格	SILICON, MIXER DIODE, DO-35, DO-35, 2 PIN
1S2076ATA-E	RENESAS	获取价格	SILICON, MIXER DIODE, DO-35, DO-35, 2 PIN
1S2076ATAX	HITACHI	获取价格	暂无描述
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1S2076ATD	HITACHI	获取价格	Mixer Diode, Silicon, DO-35, DO-35, 2 PIN